Capacitance-voltage and admittance spectroscopy of self-assembled Ge islands in Si

C. Miesner; T. Asperger; K. Brunner; G. Abstreiter

doi:10.1063/1.1320036

Capacitance-voltage and admittance spectroscopy of self-assembled Ge islands in Si

C. Miesner, T. Asperger, K. Brunner, G. Abstreiter

Natural Sciences

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We investigate the electrical properties of self-assembled Ge islands embedded in Si Schottky diode structures by means of capacitance-voltage measurements and admittance spectroscopy. The Ge islands form at T = 550°C by self-assembly in the Stranski-Krastanow growth mode with an area density of 4.5 × 10⁹cm^-2. Their diameter and height are 70 and 6.5 nm, respectively. A linear increase of the thermal activation energy observed in voltage-dependent admittance spectroscopy shows that the ensemble of Ge islands has a low, continuous, averaged density of states.

Original language	English
Pages (from-to)	2704-2706
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	17
DOIs	https://doi.org/10.1063/1.1320036
State	Published - 23 Oct 2000

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@article{c1361f3bd68c4ec3a45886096ab7522a,

title = "Capacitance-voltage and admittance spectroscopy of self-assembled Ge islands in Si",

abstract = "We investigate the electrical properties of self-assembled Ge islands embedded in Si Schottky diode structures by means of capacitance-voltage measurements and admittance spectroscopy. The Ge islands form at T = 550°C by self-assembly in the Stranski-Krastanow growth mode with an area density of 4.5 × 109cm-2. Their diameter and height are 70 and 6.5 nm, respectively. A linear increase of the thermal activation energy observed in voltage-dependent admittance spectroscopy shows that the ensemble of Ge islands has a low, continuous, averaged density of states.",

author = "C. Miesner and T. Asperger and K. Brunner and G. Abstreiter",

year = "2000",

month = oct,

day = "23",

doi = "10.1063/1.1320036",

language = "English",

volume = "77",

pages = "2704--2706",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Capacitance-voltage and admittance spectroscopy of self-assembled Ge islands in Si

AU - Miesner, C.

AU - Asperger, T.

AU - Brunner, K.

AU - Abstreiter, G.

PY - 2000/10/23

Y1 - 2000/10/23

N2 - We investigate the electrical properties of self-assembled Ge islands embedded in Si Schottky diode structures by means of capacitance-voltage measurements and admittance spectroscopy. The Ge islands form at T = 550°C by self-assembly in the Stranski-Krastanow growth mode with an area density of 4.5 × 109cm-2. Their diameter and height are 70 and 6.5 nm, respectively. A linear increase of the thermal activation energy observed in voltage-dependent admittance spectroscopy shows that the ensemble of Ge islands has a low, continuous, averaged density of states.

AB - We investigate the electrical properties of self-assembled Ge islands embedded in Si Schottky diode structures by means of capacitance-voltage measurements and admittance spectroscopy. The Ge islands form at T = 550°C by self-assembly in the Stranski-Krastanow growth mode with an area density of 4.5 × 109cm-2. Their diameter and height are 70 and 6.5 nm, respectively. A linear increase of the thermal activation energy observed in voltage-dependent admittance spectroscopy shows that the ensemble of Ge islands has a low, continuous, averaged density of states.

UR - https://www.scopus.com/pages/publications/0000757282

U2 - 10.1063/1.1320036

DO - 10.1063/1.1320036

M3 - Article

AN - SCOPUS:0000757282

SN - 0003-6951

VL - 77

SP - 2704

EP - 2706

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Capacitance-voltage and admittance spectroscopy of self-assembled Ge islands in Si

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