Calibration of electrothermal power device models using combined characterization techniques

A methodology for the calibration of electrothermal power device models is presented based on the adjustment of simulation results to measured terminal characteristics, internal carrier concentration, and temperature profiles. The mobility and carrier lifetime models for two different types of injection gate bipolar transistors are calibrated. After lifetime calibration, the channel mobility of the metal oxide semiconductor structure is determined from the saturation currents of the forward characteristics. It shows that only combined measurements of terminal characteristics together with internal carrier concentration and temperature profiles are sufficient to provide reliable information for the calibration of lifetime and mobility models.