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Broad gain injectorless quantum-cascade lasers with low threshold emitting around 8.6 μm

  • Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Broad gain lasers attract much interest due to the practical gas sensing applications. A step well structure with double optical transitions is implemented in the active region of injectorless quantum-cascade lasers (QCLs) to achieve extended gain bandwidth. The step well is constructed by a "short period superlattice" which provides an equivalent GaInAlAs alloy quantum step well in each active module. The fabricated devices show an ultrabroadband gain spectrum of 480 cm-1 (4 μm) at room temperature in pulsed mode. The laser threshold current density is as low as 1.1 kA/cm 2 which is the lowest among the broad gain QCLs emitting at similar wavelengths and the slope efficiency is 1.6 W/A at room temperature.

Original languageEnglish
Title of host publicationOptoelectronic Materials and Devices VI
DOIs
StatePublished - 2011
EventOptoelectronic Materials and Devices VI - Shanghai, China
Duration: 13 Nov 201116 Nov 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8308
ISSN (Print)0277-786X

Conference

ConferenceOptoelectronic Materials and Devices VI
Country/TerritoryChina
CityShanghai
Period13/11/1116/11/11

Keywords

  • Gain bandwidth
  • Injectorless
  • Mid-infrared
  • Quantum-cascade laser

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