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Broad gain injectorless quantum-cascade lasers with low threshold emitting around 8.6 μm

  • Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Broad gain lasers attract much interest due to the practical gas sensing applications. A step well structure with double optical transitions is implemented in the active region of injectorless quantum-cascade lasers (QCLs) to achieve extended gain bandwidth. The step well is constructed by a "short period superlattice" which provides an equivalent GaInAlAs alloy quantum step well in each active module. The fabricated devices show an ultrabroadband gain spectrum of 480 cm1 (4 μm) at room temperature in pulsed mode. The laser threshold current density is as low as 1.1 kA/cm 2 which is the lowest among the broad gain QCLs emitting at similar wavelengths and the slope efficiency is 1.6 W/A at room temperature.

Original languageEnglish
Title of host publication2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011
PublisherIEEE Computer Society
ISBN (Print)9780819489616
DOIs
StatePublished - 2011
Event2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011 - Shanghai, China
Duration: 13 Nov 201116 Nov 2011

Publication series

Name2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011

Conference

Conference2011 Asia Communications and Photonics Conference and Exhibition, ACP 2011
Country/TerritoryChina
CityShanghai
Period13/11/1116/11/11

Keywords

  • gain bandwidth
  • injectorless
  • mid-infrared
  • quantum-cascade laser

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