Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 × 10¹⁷ cm^-3 and 3 × 10²⁰ cm^-3 for phosphorus and 4 × 10 ¹⁸ cm^-3 to 3 × 10¹⁹ cm^-3 for boron-doped layers, with carrier mobilities up to 90 cm² / V s.