Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Mahmoud N. Almadhoun; Maximilian Speckbacher; Brian C. Olsen; Erik J. Luber; Sayed Youssef Sayed; Marc Tornow; Jillian M. Buriak

doi:10.1021/acs.nanolett.1c00539

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Mahmoud N. Almadhoun, Maximilian Speckbacher, Brian C. Olsen, Erik J. Luber, Sayed Youssef Sayed, Marc Tornow, Jillian M. Buriak

Associate Professorship of Molekularelektronik

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

In this work, native GaOx is positioned between bulk gallium and degenerately doped p-type silicon (p+-Si) to form Ga/GaOx/SiOx/p+-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.5 and 2.5 V, an abrupt insulator-metal transition is observed that is reversible when the polarity is reversed. The ON/OFF ratio between the high and low resistive states in these junctions can reach values on the order of 108 and retain the ON and OFF resistive states for up to 105 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.

Original language	English
Pages (from-to)	2666-2674
Number of pages	9
Journal	Nano Letters
Volume	21
Issue number	6
DOIs	https://doi.org/10.1021/acs.nanolett.1c00539
State	Published - 24 Mar 2021

Keywords

electrochemical metallization
gallium oxide
memristor
nonvolatile memory switching
resistive switching

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10.1021/acs.nanolett.1c00539

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title = "Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon",

abstract = "In this work, native GaOx is positioned between bulk gallium and degenerately doped p-type silicon (p+-Si) to form Ga/GaOx/SiOx/p+-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.5 and 2.5 V, an abrupt insulator-metal transition is observed that is reversible when the polarity is reversed. The ON/OFF ratio between the high and low resistive states in these junctions can reach values on the order of 108 and retain the ON and OFF resistive states for up to 105 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.",

keywords = "electrochemical metallization, gallium oxide, memristor, nonvolatile memory switching, resistive switching",

author = "Almadhoun, {Mahmoud N.} and Maximilian Speckbacher and Olsen, {Brian C.} and Luber, {Erik J.} and Sayed, {Sayed Youssef} and Marc Tornow and Buriak, {Jillian M.}",

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T1 - Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

AU - Almadhoun, Mahmoud N.

AU - Speckbacher, Maximilian

AU - Olsen, Brian C.

AU - Luber, Erik J.

AU - Sayed, Sayed Youssef

AU - Tornow, Marc

AU - Buriak, Jillian M.

PY - 2021/3/24

Y1 - 2021/3/24

N2 - In this work, native GaOx is positioned between bulk gallium and degenerately doped p-type silicon (p+-Si) to form Ga/GaOx/SiOx/p+-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.5 and 2.5 V, an abrupt insulator-metal transition is observed that is reversible when the polarity is reversed. The ON/OFF ratio between the high and low resistive states in these junctions can reach values on the order of 108 and retain the ON and OFF resistive states for up to 105 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.

AB - In this work, native GaOx is positioned between bulk gallium and degenerately doped p-type silicon (p+-Si) to form Ga/GaOx/SiOx/p+-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.5 and 2.5 V, an abrupt insulator-metal transition is observed that is reversible when the polarity is reversed. The ON/OFF ratio between the high and low resistive states in these junctions can reach values on the order of 108 and retain the ON and OFF resistive states for up to 105 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.

KW - electrochemical metallization

KW - gallium oxide

KW - memristor

KW - nonvolatile memory switching

KW - resistive switching

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JF - Nano Letters

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Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

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Keywords

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