TY - GEN
T1 - Bipolar Monte Carlo simulation of hot carriers in III-N LEDs
AU - Kivisaari, Pyry
AU - Sadi, Toufik
AU - Li, Jingrui
AU - Georgiev, Vihar
AU - Oksanen, Jani
AU - Rinke, Patrick
AU - Tulkki, Jukka
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/10/5
Y1 - 2015/10/5
N2 - We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.
AB - We carry out bipolar Monte Carlo (MC) simulations of electron and hole transport in a multi-quantum well light-emitting diode with an electron-blocking layer. The MC simulation accounts for the most important interband recombination and intraband scattering processes and solves self-consistently for the non-quasiequilibrium transport. The fully bipolar MC simulator results in better convergence than our previous Monte Carlo-drift-diffusion (MCDD) model and also shows clear signatures of hot holes. Accounting for both hot electron and hot hole effects increases the total current and decreases the efficiency especially at high bias voltages. We also present our in-house full band structure calculations for GaN to be coupled later with the MC simulation in order to enable even more detailed predictions of device operation.
UR - http://www.scopus.com/inward/record.url?scp=84959337323&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2015.7292342
DO - 10.1109/SISPAD.2015.7292342
M3 - Conference contribution
AN - SCOPUS:84959337323
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 393
EP - 396
BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
Y2 - 9 September 2015 through 11 September 2015
ER -