Abstract
We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.
Original language | English |
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Title of host publication | 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 |
Editors | Yuh-Renn Wu, Joachim Piprek |
Publisher | IEEE Computer Society |
Pages | 11-12 |
Number of pages | 2 |
ISBN (Electronic) | 9781479983797 |
DOIs | |
State | Published - 10 May 2015 |
Externally published | Yes |
Event | 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 - Taipei, Taiwan, Province of China Duration: 7 Sep 2015 → 11 Sep 2015 |
Publication series
Name | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD |
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Volume | 2015-May |
ISSN (Print) | 2158-3234 |
Conference
Conference | 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 |
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Country/Territory | Taiwan, Province of China |
City | Taipei |
Period | 7/09/15 → 11/09/15 |
Keywords
- Charge carrier processes
- Gallium nitride
- Hot carrier effects
- Light emitting diodes
- Monte Carlo methods
- Scattering