Bipolar Monte Carlo simulation of hot carriers in III-N LEDs

Pyry Kivisaari, Toufik Sadi, Jingrui Li, Jani Oksanen, Patrick Rinke, Jukka Tulkki

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.

Original languageEnglish
Title of host publication15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
EditorsYuh-Renn Wu, Joachim Piprek
PublisherIEEE Computer Society
Pages11-12
Number of pages2
ISBN (Electronic)9781479983797
DOIs
StatePublished - 10 May 2015
Externally publishedYes
Event15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 - Taipei, Taiwan, Province of China
Duration: 7 Sep 201511 Sep 2015

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume2015-May
ISSN (Print)2158-3234

Conference

Conference15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
Country/TerritoryTaiwan, Province of China
CityTaipei
Period7/09/1511/09/15

Keywords

  • Charge carrier processes
  • Gallium nitride
  • Hot carrier effects
  • Light emitting diodes
  • Monte Carlo methods
  • Scattering

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