Bi-containing n-fewo4 thin films provide the largest photovoltage and highest stability for a sub-2 ev band gap photoanode

Lan Zhou, Aniketa Shinde, Santosh K. Suram, Helge S. Stein, Sage R. Bauers, Andriy Zakutayev, Joseph S. Duchene, Guiji Liu, Elizabeth A. Peterson, Jeffrey B. Neaton, John M. Gregoire

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Photoelectrocatalysis of the oxygen evolution reaction remains a primary challenge for development of tandem-Absorber solar fuel generators due to the lack of a photoanode with broad solar spectrum utilization, a large photovoltage, and stable operation. Bismuth vanadate with a 2.4-2.5 eV band gap has shown the most promise becauses its photoactivity down to 0.4 V vs RHE is sufficiently low to couple to a lower-gap photocathode for fuel synthesis. Through development of photoanodes based on the FeWO4 structure, in particular, Fe-rich variants with addition of about 6% Bi, we demonstrate the same 0.4 V vs RHE turn-on voltage with a 2 eV band gap metal oxide, enabling a 2-fold increase in the device efficiency limit. Combinatorial exploration of materials composition and processing facilitated synthesis of n-Type variants of this typical p-Type semiconductor that exhibit much higher photoactivity than previous implementations of FeWO4 in solar photochemistry. The photoanodes are particularly promising for solar fuel applications given their stable operation in acid and base.

Original languageEnglish
Pages (from-to)2769-2774
Number of pages6
JournalACS Energy Letters
Volume3
Issue number11
DOIs
StatePublished - 9 Nov 2018
Externally publishedYes

Fingerprint

Dive into the research topics of 'Bi-containing n-fewo4 thin films provide the largest photovoltage and highest stability for a sub-2 ev band gap photoanode'. Together they form a unique fingerprint.

Cite this