@inproceedings{90510b202e914f96acb2195d4633ace0,
title = "Behaviour of 4H-SiC pin diodes studied by numerical device simulation",
abstract = "We simulated and measured the forward characteristics of 4H-SiC pin diodes in a wide temperature range from 300K to 700K. Our simulations are based on the stationary drift-diffusion model including a model for incomplete ionization of the dopants. Physically based models for Auger recombination and Shockley-Read-Hall recombination are used as well. For the mobility model the empirical relation of Caughey-Thomas is used. The model parameters to be calibrated in the simulation are the electron and hole minority lifetimes and the electron and hole bulk mobilities. Employing temperature-dependent carrier lifetimes we achieved very good agreement between simulations and measured data. For the temperature- and doping-dependent carrier mobilities we found that the best fit is obtained for a bulk mobility value much smaller than that suggested by standard parameters for 4H-SiC. With the calibrated parameters we simulated the internal carrier distributions for temperatures up to 700 K and for different carrier lifetimes.",
keywords = "High-temperature measurement, Numerical simulation, Pin diodes",
author = "D. Werber and P. Borthen and G. Wachutka",
note = "Publisher Copyright: {\textcopyright} (2007) Trans Tech Publications, Switzerland.; 6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006 ; Conference date: 03-09-2006 Through 07-09-2006",
year = "2007",
doi = "10.4028/www.scientific.net/MSF.556-557.905",
language = "English",
isbn = "0878494421",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "905--908",
editor = "N. Wright and C.M. Johnson and K. Vassilevski and I. Nikitina and A. Horsfall",
booktitle = "Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials",
}