Behaviour of 4H-SiC pin diodes studied by numerical device simulation

D. Werber, P. Borthen, G. Wachutka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We simulated and measured the forward characteristics of 4H-SiC pin diodes in a wide temperature range from 300K to 700K. Our simulations are based on the stationary drift-diffusion model including a model for incomplete ionization of the dopants. Physically based models for Auger recombination and Shockley-Read-Hall recombination are used as well. For the mobility model the empirical relation of Caughey-Thomas is used. The model parameters to be calibrated in the simulation are the electron and hole minority lifetimes and the electron and hole bulk mobilities. Employing temperature-dependent carrier lifetimes we achieved very good agreement between simulations and measured data. For the temperature- and doping-dependent carrier mobilities we found that the best fit is obtained for a bulk mobility value much smaller than that suggested by standard parameters for 4H-SiC. With the calibrated parameters we simulated the internal carrier distributions for temperatures up to 700 K and for different carrier lifetimes.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
EditorsN. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall
PublisherTrans Tech Publications Ltd
Pages905-908
Number of pages4
ISBN (Print)0878494421, 9780878494422, 9780878494422
DOIs
StatePublished - 2007
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006 - Newcastle upon Tyne, United Kingdom
Duration: 3 Sep 20067 Sep 2006

Publication series

NameMaterials Science Forum
Volume556-557
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006
Country/TerritoryUnited Kingdom
CityNewcastle upon Tyne
Period3/09/067/09/06

Keywords

  • High-temperature measurement
  • Numerical simulation
  • Pin diodes

Fingerprint

Dive into the research topics of 'Behaviour of 4H-SiC pin diodes studied by numerical device simulation'. Together they form a unique fingerprint.

Cite this