Bands, bonds, and polarizations in nitrides - From electronic orbitals to electronic devices

J. A. Majewski, G. Zandler, P. Vogl

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

A key property of the nitrides is the fact that they possess large spontaneous and piezoelectric polarization fields that allow a significant tailoring of the carrier dynamics and optical properties of nitride devices. In this paper, based on first-principles calculations of structural and electronic properties of bulk nitrides and their heterostructure, we investigate the potential of this novel material class for modern device applications by performing self-consistent Monte Carlo simulations. Our studies reveal that the nitride based electronic devices have characteristics that predispose them for high power and high frequency applications. We demonstrate also that transistor characteristics are favorably influenced by the internal polarization induced electric fields.

Original languageEnglish
Pages (from-to)249-260
Number of pages12
JournalActa Physica Polonica A
Volume100
Issue number2
DOIs
StatePublished - 2001
Event30th International School on Physics of Semiconducting Compounds - Jaszowiec, Poland
Duration: 1 Jun 20018 Jun 2001

Fingerprint

Dive into the research topics of 'Bands, bonds, and polarizations in nitrides - From electronic orbitals to electronic devices'. Together they form a unique fingerprint.

Cite this