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Band parameters and strain effects in ZnO and group-III nitrides

  • Qimin Yan
  • , Patrick Rinke
  • , M. Winkelnkemper
  • , A. Qteish
  • , D. Bimberg
  • , Matthias Scheffler
  • , Chris G. Van De Walle
  • University of California
  • Abteilung Physikalische Chemie
  • Technische Universität Berlin
  • Yarmouk University

Research output: Contribution to journalArticlepeer-review

69 Scopus citations

Abstract

We present consistent sets of band parameters (including band gaps, crystal-field splittings, effective masses, Luttinger and EP parameters) for AlN, GaN, InN and ZnO in the wurtzite phase. For band-energy differences we observe a pronounced nonlinear dependence on strain. Consistent and complete sets of deformation potentials are then derived for realistic strain conditions in the linear regime around the experimental equilibrium volume. To overcome the limitations of density-functional theory in the local-density and generalized-gradient approximations we employ the Heyd-Scuseria-Ernzerhof hybrid functional as well as exact exchange (OEPx)-based quasi-particle energy calculations in the G0W0 approach.

Original languageEnglish
Article number014037
JournalSemiconductor Science and Technology
Volume26
Issue number1
DOIs
StatePublished - Jan 2011
Externally publishedYes

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