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Band gap of strain-symmetrized, short-period Si/Ge superlattices

  • Janos Olajos
  • , Jesper Engvall
  • , Hermann G. Grimmeiss
  • , Ulrich Menczigar
  • , Gerhard Abstreiter
  • , Horst Kibbel
  • , Erich Kasper
  • , Hartmut Presting
  • Lund University
  • Walter Schottky Institut
  • Daimler-Benz AG

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

We report an identification and determination of the band-gap energies in a series of strain-symmetrized Sin/Gen superlattices. Absorption onsets are observed that shift toward higher energies with decreasing period length in superlattices with identical Si/Ge ratio. Band-gap energies of 0.67, 0.76, and 0.88 eV for Si6/Ge6, Si5/Ge5, and Si4/Ge4 superlattices, respectively, are determined by a fitting procedure. Strong photoluminescence and electroluminescence are observed for the Si5/Ge5 superlattices. The energetic position indicates that the luminescence is related to interband transitions.

Original languageEnglish
Pages (from-to)12857-12860
Number of pages4
JournalPhysical Review B
Volume46
Issue number19
DOIs
StatePublished - 1992

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