Abstract
We report an identification and determination of the band-gap energies in a series of strain-symmetrized Sin/Gen superlattices. Absorption onsets are observed that shift toward higher energies with decreasing period length in superlattices with identical Si/Ge ratio. Band-gap energies of 0.67, 0.76, and 0.88 eV for Si6/Ge6, Si5/Ge5, and Si4/Ge4 superlattices, respectively, are determined by a fitting procedure. Strong photoluminescence and electroluminescence are observed for the Si5/Ge5 superlattices. The energetic position indicates that the luminescence is related to interband transitions.
| Original language | English |
|---|---|
| Pages (from-to) | 12857-12860 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 46 |
| Issue number | 19 |
| DOIs | |
| State | Published - 1992 |
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