Band gap luminescence in pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy

J. Brunner; U. Menczigar; M. Gail; E. Friess; G. Abstreiter

doi:10.1016/0040-6090(92)90031-6

Band gap luminescence in pseudomorphic Si_1-xGe_x quantum wells grown by molecular beam epitaxy

J. Brunner, U. Menczigar, M. Gail, E. Friess, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We present photoluminescence studies of SiGe quantum wells with different well widths. Special attention is paid to the influence of growth conditions on the spectra. Growth temperatures above 600 °C are found to be a prerequisite for a good layer quality. With optimized growth conditions, strong excitonic dominated luminescence with full width at half-maximum values as low as 4.5 meV has been achieved for narrow quantum wells. The variation in the luminescence energy with germanium content and well width is well described by theory.

Original language	English
Pages (from-to)	27-29
Number of pages	3
Journal	Thin Solid Films
Volume	222
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(92)90031-6
State	Published - 20 Dec 1992

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abstract = "We present photoluminescence studies of SiGe quantum wells with different well widths. Special attention is paid to the influence of growth conditions on the spectra. Growth temperatures above 600 °C are found to be a prerequisite for a good layer quality. With optimized growth conditions, strong excitonic dominated luminescence with full width at half-maximum values as low as 4.5 meV has been achieved for narrow quantum wells. The variation in the luminescence energy with germanium content and well width is well described by theory.",

author = "J. Brunner and U. Menczigar and M. Gail and E. Friess and G. Abstreiter",

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AU - Brunner, J.

AU - Menczigar, U.

AU - Gail, M.

AU - Friess, E.

AU - Abstreiter, G.

PY - 1992/12/20

Y1 - 1992/12/20

N2 - We present photoluminescence studies of SiGe quantum wells with different well widths. Special attention is paid to the influence of growth conditions on the spectra. Growth temperatures above 600 °C are found to be a prerequisite for a good layer quality. With optimized growth conditions, strong excitonic dominated luminescence with full width at half-maximum values as low as 4.5 meV has been achieved for narrow quantum wells. The variation in the luminescence energy with germanium content and well width is well described by theory.

AB - We present photoluminescence studies of SiGe quantum wells with different well widths. Special attention is paid to the influence of growth conditions on the spectra. Growth temperatures above 600 °C are found to be a prerequisite for a good layer quality. With optimized growth conditions, strong excitonic dominated luminescence with full width at half-maximum values as low as 4.5 meV has been achieved for narrow quantum wells. The variation in the luminescence energy with germanium content and well width is well described by theory.

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DO - 10.1016/0040-6090(92)90031-6

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JF - Thin Solid Films

IS - 1-2

ER -

Band gap luminescence in pseudomorphic Si_1-xGe_x quantum wells grown by molecular beam epitaxy

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