Band gap and band offset of (GaIn)(PSb) lattice matched to InP

F. Köhler; G. Böhm; R. Meyer; M. C. Amann

doi:10.1063/1.1996847

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

F. Köhler, G. Böhm, R. Meyer, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Metastable (Gax In1-x) (Py Sb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (Gax In1-x) (Py Sb1-y). In addition, samples with layer thicknesses larger than 100 nm showed direct PL across the band gap of (Gax In1-x) (Py Sb1-y). Band-gap energies and band offset energies of (Gax In1-x) (Py Sb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

Original language	English
Article number	032102
Journal	Applied Physics Letters
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.1996847
State	Published - 18 Jul 2005

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title = "Band gap and band offset of (GaIn)(PSb) lattice matched to InP",

abstract = "Metastable (Gax In1-x) (Py Sb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (Gax In1-x) (Py Sb1-y). In addition, samples with layer thicknesses larger than 100 nm showed direct PL across the band gap of (Gax In1-x) (Py Sb1-y). Band-gap energies and band offset energies of (Gax In1-x) (Py Sb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.",

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T1 - Band gap and band offset of (GaIn)(PSb) lattice matched to InP

AU - Köhler, F.

AU - Böhm, G.

AU - Meyer, R.

AU - Amann, M. C.

PY - 2005/7/18

Y1 - 2005/7/18

N2 - Metastable (Gax In1-x) (Py Sb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (Gax In1-x) (Py Sb1-y). In addition, samples with layer thicknesses larger than 100 nm showed direct PL across the band gap of (Gax In1-x) (Py Sb1-y). Band-gap energies and band offset energies of (Gax In1-x) (Py Sb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

AB - Metastable (Gax In1-x) (Py Sb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (Gax In1-x) (Py Sb1-y). In addition, samples with layer thicknesses larger than 100 nm showed direct PL across the band gap of (Gax In1-x) (Py Sb1-y). Band-gap energies and band offset energies of (Gax In1-x) (Py Sb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

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Band gap and band offset of (GaIn)(PSb) lattice matched to InP

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