Ballistic electrons in ferromagnet/semiconductor hybrid structures: From nanomagnetometry to spin injection

Research output: Contribution to journalArticlepeer-review

Abstract

We review our recent experimental and theoretical studies on ferromagnet/semiconductor hybrid structures and discuss the role of ballistic electrons in such systems. We focus in particular on two peculiar features: first, ballistic electrons in semiconductors are shown to be in particular sensitive to local details of an inhomogeneous stray field. We argue that this can preferentially be used for nanomagnetometry. Second, we show theoretically that, in case of the injection of ballistic electrons from a metallic ferromagnet into a semiconductor, a spin-dependent interface resistance arises due to band-structure mismatch that causes spin filtering at the interface. Recent band-structure calculations suggest that for an epitaxial interface a nearly 100% spin-polarized current might be generated in a spin-injection experiment.

Original languageEnglish
Pages (from-to)529-540
Number of pages12
JournalActa Physica Polonica A
Volume102
Issue number4-5
DOIs
StatePublished - 2002
Externally publishedYes

Fingerprint

Dive into the research topics of 'Ballistic electrons in ferromagnet/semiconductor hybrid structures: From nanomagnetometry to spin injection'. Together they form a unique fingerprint.

Cite this