Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure

D. Tobben; D. A. Wharam; G. Abstreiter; J. P. Kolthaus; F. Schaffler

doi:10.1088/0268-1242/10/5/025

Ballistic electron transport through a quantum point contact defined in a Si/Si_0.7Ge_0.3 heterostructure

D. Tobben, D. A. Wharam, G. Abstreiter, J. P. Kolthaus, F. Schaffler

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

We have studied the low-temperature (T=25 mK) ballistic transport of electrons in a split-gate device fabricated from a Si/Si_0.7Ge _0.3 heterostructure. In the absence of a magnetic field the conductance is quantized in units of i*4e²/h as the gate voltage is tuned where i is the number of occupied subbands. In this system, both the spin and the valley degeneracies have to be taken into account. These can be lifted by applying a perpendicular magnetic field. Magnetic depopulation of the one-dimensional subbands is observed and can be simulated using a simple square well potential model.

Original language	English
Article number	025
Pages (from-to)	711-714
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	10
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/10/5/025
State	Published - 1995

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abstract = "We have studied the low-temperature (T=25 mK) ballistic transport of electrons in a split-gate device fabricated from a Si/Si0.7Ge 0.3 heterostructure. In the absence of a magnetic field the conductance is quantized in units of i*4e2/h as the gate voltage is tuned where i is the number of occupied subbands. In this system, both the spin and the valley degeneracies have to be taken into account. These can be lifted by applying a perpendicular magnetic field. Magnetic depopulation of the one-dimensional subbands is observed and can be simulated using a simple square well potential model.",

author = "D. Tobben and Wharam, {D. A.} and G. Abstreiter and Kolthaus, {J. P.} and F. Schaffler",

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T1 - Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure

AU - Tobben, D.

AU - Wharam, D. A.

AU - Abstreiter, G.

AU - Kolthaus, J. P.

AU - Schaffler, F.

PY - 1995

Y1 - 1995

N2 - We have studied the low-temperature (T=25 mK) ballistic transport of electrons in a split-gate device fabricated from a Si/Si0.7Ge 0.3 heterostructure. In the absence of a magnetic field the conductance is quantized in units of i*4e2/h as the gate voltage is tuned where i is the number of occupied subbands. In this system, both the spin and the valley degeneracies have to be taken into account. These can be lifted by applying a perpendicular magnetic field. Magnetic depopulation of the one-dimensional subbands is observed and can be simulated using a simple square well potential model.

AB - We have studied the low-temperature (T=25 mK) ballistic transport of electrons in a split-gate device fabricated from a Si/Si0.7Ge 0.3 heterostructure. In the absence of a magnetic field the conductance is quantized in units of i*4e2/h as the gate voltage is tuned where i is the number of occupied subbands. In this system, both the spin and the valley degeneracies have to be taken into account. These can be lifted by applying a perpendicular magnetic field. Magnetic depopulation of the one-dimensional subbands is observed and can be simulated using a simple square well potential model.

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JF - Semiconductor Science and Technology

IS - 5

M1 - 025

ER -

Ballistic electron transport through a quantum point contact defined in a Si/Si_0.7Ge_0.3 heterostructure

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