Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices

Gerald Soelkner; Johannes Kreutle; Jörg Quincke; Winfried Kaindl; Gerhard Wachutka

doi:10.1016/S0026-2714(00)00186-4

Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices

Gerald Soelkner
, Johannes Kreutle
, Jörg Quincke
, Winfried Kaindl
, Gerhard Wachutka

Computation, Information and Technology

Siemens AG
Weingarten University of Applied Sciences
Technical University of Munich

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Planar edge termination structures of power semiconductor devices reduce the high electric potential close to the sawed physical edges. Careful design of field ring diffusions and metallized field plates are, however, required to avoid local electric field enhancements that could lead to premature breakdown. It has been shown that back side optical beam induced current (BS-OBIC) measurement offer a means to experimentally probe electric field distributions in termination structures that are optically inaccessible due to metallized field plates.

Original language	English
Pages (from-to)	1641-1645
Number of pages	5
Journal	Microelectronics Reliability
Volume	40
Issue number	8-10
DOIs	https://doi.org/10.1016/S0026-2714(00)00186-4
State	Published - 2000

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10.1016/S0026-2714(00)00186-4

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title = "Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices",

abstract = "Planar edge termination structures of power semiconductor devices reduce the high electric potential close to the sawed physical edges. Careful design of field ring diffusions and metallized field plates are, however, required to avoid local electric field enhancements that could lead to premature breakdown. It has been shown that back side optical beam induced current (BS-OBIC) measurement offer a means to experimentally probe electric field distributions in termination structures that are optically inaccessible due to metallized field plates.",

author = "Gerald Soelkner and Johannes Kreutle and J{\"o}rg Quincke and Winfried Kaindl and Gerhard Wachutka",

year = "2000",

doi = "10.1016/S0026-2714(00)00186-4",

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T1 - Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices

AU - Soelkner, Gerald

AU - Kreutle, Johannes

AU - Quincke, Jörg

AU - Kaindl, Winfried

AU - Wachutka, Gerhard

PY - 2000

Y1 - 2000

N2 - Planar edge termination structures of power semiconductor devices reduce the high electric potential close to the sawed physical edges. Careful design of field ring diffusions and metallized field plates are, however, required to avoid local electric field enhancements that could lead to premature breakdown. It has been shown that back side optical beam induced current (BS-OBIC) measurement offer a means to experimentally probe electric field distributions in termination structures that are optically inaccessible due to metallized field plates.

AB - Planar edge termination structures of power semiconductor devices reduce the high electric potential close to the sawed physical edges. Careful design of field ring diffusions and metallized field plates are, however, required to avoid local electric field enhancements that could lead to premature breakdown. It has been shown that back side optical beam induced current (BS-OBIC) measurement offer a means to experimentally probe electric field distributions in termination structures that are optically inaccessible due to metallized field plates.

UR - https://www.scopus.com/pages/publications/0010042889

U2 - 10.1016/S0026-2714(00)00186-4

DO - 10.1016/S0026-2714(00)00186-4

M3 - Article

AN - SCOPUS:0010042889

SN - 0026-2714

VL - 40

SP - 1641

EP - 1645

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8-10

ER -

Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices

Abstract

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