Ba1-xKxBiO3 Epitaxy on Various Substrate Materials

B. Utz, F. Wiest, W. Prusseit, P. Berberich, H. Kinder

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We have fabricated Ba1-xKxBiO3 (BKBO) films by thermal co-evaporation of the metals K, Ba and Bi. To improve the epitaxy a high temperature BaBiO3 seed layer is deposited prior to the BKBO film which results in TC values up to 24 K on standard substrates. As BKBO grows well on perovskites we deposited thin PrBa2Cu3O7 (PBCO) layers by thermal co-evaporation on MgO, CeO2 buffered sapphire, YSZ buffered Si and YSZ substrates. BKBO films on these systems are epitaxial and show the same Tc values as on standard substrates. Thus, by using a PBCO buffer layer technical substrates are available for BKBO thin films.

Original languageEnglish
Pages (from-to)1351-1354
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume5
Issue number2
DOIs
StatePublished - Jun 1995

Fingerprint

Dive into the research topics of 'Ba1-xKxBiO3 Epitaxy on Various Substrate Materials'. Together they form a unique fingerprint.

Cite this