Autocompensation doping in light-soaked and in radiation-damaged a-Si:H

H. Stitzl, G. Krötz, G. Müller

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


n-type a-Si:H films have been irradiated with light, electrons, protons and heavy ion beams. It is shown that the non-thermal creation of dangling-bond defects activates significant densities of previously inactive phosphorus dopants. The relevance of these results is discussed with respect to equilibration phenomena in doped material and with respect to degradation phenomena in a-Si:H solar cells.

Original languageEnglish
Pages (from-to)335-338
Number of pages4
JournalApplied Physics A Solids and Surfaces
Issue number5
StatePublished - May 1991
Externally publishedYes


  • 61.40
  • 61.80
  • 72.20


Dive into the research topics of 'Autocompensation doping in light-soaked and in radiation-damaged a-Si:H'. Together they form a unique fingerprint.

Cite this