Atomic vapor deposition approach to In 2O 3 thin films

Malte Hellwig; Harish Parala; Joanna Cybinksa; Davide Barreca; Alberto Gasparotto; Benedikt Niermann; Hans Werner Becker; Detlef Rogalla; Jürgen Feydt; Stephan Irsen; Anja Verena Mudring; Jörg Winter; Roland A. Fischer; Anjana Devi

doi:10.1166/jnn.2011.5024

Atomic vapor deposition approach to In ₂O ₃ thin films

Malte Hellwig, Harish Parala, Joanna Cybinksa, Davide Barreca, Alberto Gasparotto, Benedikt Niermann, Hans Werner Becker, Detlef Rogalla, Jürgen Feydt, Stephan Irsen, Anja Verena Mudring, Jörg Winter, Roland A. Fischer, Anjana Devi

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In ₂O ₃ thin films were grown by atomic vapor deposition (AVD) on Si(100) and glass substrates from a tris-guanidinate complex of indium [In(NiPr ₂guanid) ₃] under an oxygen atmosphere. The effects of the growth temperature on the structure, morphology and composition of In ₂O ₃ films were investigated. X-ray diffraction (XRD) measurements revealed that In ₂O ₃ films deposited in the temperature range 450-700°C crystallised in the cubic phase. The film morphology, studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), was strongly dependent on the substrate temperature. Stoichiometric In ₂O ₃ films were formed under optimised processing conditions as was confirmed by X-ray photoelectron and X-ray excited Auger electron spectroscopies (XPS, XE-AES), as well as by Rutherford backscattering spectrometry (RBS). Finally, optical properties were investigated by photoluminescence (PL) measurements, spectroscopic ellipsometry (SE) and optical absorption. In ₂O ₃ films grown on glass exhibited excellent transparency (≈90%) in the Visible (Vis) spectral region.

Original language	English
Pages (from-to)	8094-8100
Number of pages	7
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	9
DOIs	https://doi.org/10.1166/jnn.2011.5024
State	Published - Sep 2011
Externally published	Yes

Keywords

AVD
Composition
In O
Morphology
Thin films

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10.1166/jnn.2011.5024

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title = "Atomic vapor deposition approach to In 2O 3 thin films",

abstract = "In 2O 3 thin films were grown by atomic vapor deposition (AVD) on Si(100) and glass substrates from a tris-guanidinate complex of indium [In(NiPr 2guanid) 3] under an oxygen atmosphere. The effects of the growth temperature on the structure, morphology and composition of In 2O 3 films were investigated. X-ray diffraction (XRD) measurements revealed that In 2O 3 films deposited in the temperature range 450-700°C crystallised in the cubic phase. The film morphology, studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), was strongly dependent on the substrate temperature. Stoichiometric In 2O 3 films were formed under optimised processing conditions as was confirmed by X-ray photoelectron and X-ray excited Auger electron spectroscopies (XPS, XE-AES), as well as by Rutherford backscattering spectrometry (RBS). Finally, optical properties were investigated by photoluminescence (PL) measurements, spectroscopic ellipsometry (SE) and optical absorption. In 2O 3 films grown on glass exhibited excellent transparency (≈90%) in the Visible (Vis) spectral region.",

keywords = "AVD, Composition, In O, Morphology, Thin films",

author = "Malte Hellwig and Harish Parala and Joanna Cybinksa and Davide Barreca and Alberto Gasparotto and Benedikt Niermann and Becker, {Hans Werner} and Detlef Rogalla and J{\"u}rgen Feydt and Stephan Irsen and Mudring, {Anja Verena} and J{\"o}rg Winter and Fischer, {Roland A.} and Anjana Devi",

year = "2011",

month = sep,

doi = "10.1166/jnn.2011.5024",

language = "English",

volume = "11",

pages = "8094--8100",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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T1 - Atomic vapor deposition approach to In 2O 3 thin films

AU - Hellwig, Malte

AU - Parala, Harish

AU - Cybinksa, Joanna

AU - Barreca, Davide

AU - Gasparotto, Alberto

AU - Niermann, Benedikt

AU - Becker, Hans Werner

AU - Rogalla, Detlef

AU - Feydt, Jürgen

AU - Irsen, Stephan

AU - Mudring, Anja Verena

AU - Winter, Jörg

AU - Fischer, Roland A.

AU - Devi, Anjana

PY - 2011/9

Y1 - 2011/9

N2 - In 2O 3 thin films were grown by atomic vapor deposition (AVD) on Si(100) and glass substrates from a tris-guanidinate complex of indium [In(NiPr 2guanid) 3] under an oxygen atmosphere. The effects of the growth temperature on the structure, morphology and composition of In 2O 3 films were investigated. X-ray diffraction (XRD) measurements revealed that In 2O 3 films deposited in the temperature range 450-700°C crystallised in the cubic phase. The film morphology, studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), was strongly dependent on the substrate temperature. Stoichiometric In 2O 3 films were formed under optimised processing conditions as was confirmed by X-ray photoelectron and X-ray excited Auger electron spectroscopies (XPS, XE-AES), as well as by Rutherford backscattering spectrometry (RBS). Finally, optical properties were investigated by photoluminescence (PL) measurements, spectroscopic ellipsometry (SE) and optical absorption. In 2O 3 films grown on glass exhibited excellent transparency (≈90%) in the Visible (Vis) spectral region.

AB - In 2O 3 thin films were grown by atomic vapor deposition (AVD) on Si(100) and glass substrates from a tris-guanidinate complex of indium [In(NiPr 2guanid) 3] under an oxygen atmosphere. The effects of the growth temperature on the structure, morphology and composition of In 2O 3 films were investigated. X-ray diffraction (XRD) measurements revealed that In 2O 3 films deposited in the temperature range 450-700°C crystallised in the cubic phase. The film morphology, studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), was strongly dependent on the substrate temperature. Stoichiometric In 2O 3 films were formed under optimised processing conditions as was confirmed by X-ray photoelectron and X-ray excited Auger electron spectroscopies (XPS, XE-AES), as well as by Rutherford backscattering spectrometry (RBS). Finally, optical properties were investigated by photoluminescence (PL) measurements, spectroscopic ellipsometry (SE) and optical absorption. In 2O 3 films grown on glass exhibited excellent transparency (≈90%) in the Visible (Vis) spectral region.

KW - AVD

KW - Composition

KW - In O

KW - Morphology

KW - Thin films

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DO - 10.1166/jnn.2011.5024

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JO - Journal of Nanoscience and Nanotechnology

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ER -

Atomic vapor deposition approach to In ₂O ₃ thin films

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Keywords

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