Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

J. Provine; Peter Schindler; Jan Torgersen; Hyo Jin Kim; Hans Peter Karnthaler; Fritz B. Prinz

doi:10.1116/1.4937991

Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

J. Provine, Peter Schindler, Jan Torgersen, Hyo Jin Kim, Hans Peter Karnthaler, Fritz B. Prinz

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO₂, ZrO₂, and HfO₂ by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O₂ has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O₂) and several metal organic precursors based on TDMA ligands. The effect of O₂ exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H₂O and PEALD with O₂ plasma.

Original language	English
Article number	01A138
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	34
Issue number	1
DOIs	https://doi.org/10.1116/1.4937991
State	Published - 1 Jan 2016
Externally published	Yes

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title = "Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors",

abstract = "Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O2 has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O2) and several metal organic precursors based on TDMA ligands. The effect of O2 exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H2O and PEALD with O2 plasma.",

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AU - Provine, J.

AU - Schindler, Peter

AU - Torgersen, Jan

AU - Kim, Hyo Jin

AU - Karnthaler, Hans Peter

AU - Prinz, Fritz B.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O2 has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O2) and several metal organic precursors based on TDMA ligands. The effect of O2 exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H2O and PEALD with O2 plasma.

AB - Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O2 has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O2) and several metal organic precursors based on TDMA ligands. The effect of O2 exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H2O and PEALD with O2 plasma.

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Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

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