Application of the Point Defect Model to the Oscillatory Anodic Oxidation of Illuminated n-Type Silicon in the Presence of Fluoride Ions Using Electrochemical Impedance Spectroscopy

This work aims to provide insight into the oscillations occurring during the anodic electrooxidation of Si in fluoride-containing electrolytes using electrochemical impedance spectroscopy (EIS). The EIS measurements were conducted within less than a tenth of the oscillation periods allowing changes in the electrical properties of the silicon/oxide/electrolyte interfaces to be monitored during an oscillatory cycle. Application of the power law model to the experimental data revealed a significant change in resistivity at the oxide/semiconductor interface while the properties at the oxide/electrolyte interface remained constant and the oxide layer varied only by about 1 nm around an average value of about 4.9 nm. The application of the point defect model to the semiconductor/oxide/F⁻-containing electrolyte interface suggests that the oscillations are linked to the time delay between the production of oxygen vacancies at the Si/oxide interface and their consumption at the oxide/electrolyte interface.