Antiferromagnetic coupling in combined Fe/Si/MgO/Fe structures with controlled interface diffusion

Rashid Gareev; Frank Stromberg; Matthias Buchmeier; Werner Keune; Christian Back; Heiko Wende

doi:10.1143/APEX.5.033003

Antiferromagnetic coupling in combined Fe/Si/MgO/Fe structures with controlled interface diffusion

Rashid Gareev, Frank Stromberg, Matthias Buchmeier, Werner Keune, Christian Back, Heiko Wende

Research output: Contribution to journal › Article › peer-review

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Abstract

We study antiferromagnetic coupling and interface diffusion in Fe/Si/MgO/Fe structures grown by molecular beam epitaxy. The Fe/Si/Fe samples with a 1.2-nm-thick Si spacer demonstrate antiferromagnetic coupling J ₁ ∼- 1:5 mJ/m ² and prevailing interdiffusion at the top Si/Fe interface, as revealed by conversion electron Mössbauer spectroscopy. For combined Si/MgO spacers with 0.9-nm-thick Si, interdiffusion continuously reduces upon changing the MgO thickness from 0.3 to 0.5nm accompanied by a decrease of antiferromagnetic coupling from |J ₁| ∼ 1 mJ/m2 to |J ₁| ∼ 0:002mJ/m ². We emphasize that monolayer-scaled engineering of insulating spacers is a promising tool for the precise control of antiferromagnetic coupling and interface diffusion.

Original language	English
Article number	033003
Journal	Applied Physics Express
Volume	5
Issue number	3
DOIs	https://doi.org/10.1143/APEX.5.033003
State	Published - Mar 2012
Externally published	Yes

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title = "Antiferromagnetic coupling in combined Fe/Si/MgO/Fe structures with controlled interface diffusion",

abstract = "We study antiferromagnetic coupling and interface diffusion in Fe/Si/MgO/Fe structures grown by molecular beam epitaxy. The Fe/Si/Fe samples with a 1.2-nm-thick Si spacer demonstrate antiferromagnetic coupling J 1 ∼- 1:5 mJ/m 2 and prevailing interdiffusion at the top Si/Fe interface, as revealed by conversion electron M{\"o}ssbauer spectroscopy. For combined Si/MgO spacers with 0.9-nm-thick Si, interdiffusion continuously reduces upon changing the MgO thickness from 0.3 to 0.5nm accompanied by a decrease of antiferromagnetic coupling from |J 1| ∼ 1 mJ/m2 to |J 1| ∼ 0:002mJ/m 2. We emphasize that monolayer-scaled engineering of insulating spacers is a promising tool for the precise control of antiferromagnetic coupling and interface diffusion.",

author = "Rashid Gareev and Frank Stromberg and Matthias Buchmeier and Werner Keune and Christian Back and Heiko Wende",

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T1 - Antiferromagnetic coupling in combined Fe/Si/MgO/Fe structures with controlled interface diffusion

AU - Gareev, Rashid

AU - Stromberg, Frank

AU - Buchmeier, Matthias

AU - Keune, Werner

AU - Back, Christian

AU - Wende, Heiko

PY - 2012/3

Y1 - 2012/3

N2 - We study antiferromagnetic coupling and interface diffusion in Fe/Si/MgO/Fe structures grown by molecular beam epitaxy. The Fe/Si/Fe samples with a 1.2-nm-thick Si spacer demonstrate antiferromagnetic coupling J 1 ∼- 1:5 mJ/m 2 and prevailing interdiffusion at the top Si/Fe interface, as revealed by conversion electron Mössbauer spectroscopy. For combined Si/MgO spacers with 0.9-nm-thick Si, interdiffusion continuously reduces upon changing the MgO thickness from 0.3 to 0.5nm accompanied by a decrease of antiferromagnetic coupling from |J 1| ∼ 1 mJ/m2 to |J 1| ∼ 0:002mJ/m 2. We emphasize that monolayer-scaled engineering of insulating spacers is a promising tool for the precise control of antiferromagnetic coupling and interface diffusion.

AB - We study antiferromagnetic coupling and interface diffusion in Fe/Si/MgO/Fe structures grown by molecular beam epitaxy. The Fe/Si/Fe samples with a 1.2-nm-thick Si spacer demonstrate antiferromagnetic coupling J 1 ∼- 1:5 mJ/m 2 and prevailing interdiffusion at the top Si/Fe interface, as revealed by conversion electron Mössbauer spectroscopy. For combined Si/MgO spacers with 0.9-nm-thick Si, interdiffusion continuously reduces upon changing the MgO thickness from 0.3 to 0.5nm accompanied by a decrease of antiferromagnetic coupling from |J 1| ∼ 1 mJ/m2 to |J 1| ∼ 0:002mJ/m 2. We emphasize that monolayer-scaled engineering of insulating spacers is a promising tool for the precise control of antiferromagnetic coupling and interface diffusion.

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Antiferromagnetic coupling in combined Fe/Si/MgO/Fe structures with controlled interface diffusion

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