Antiferromagnetic coupling across silicon regulated by tunneling currents

R. R. Gareev, M. Schmid, J. Vancea, C. H. Back, R. Schreiber, D. Bürgler, C. M. Schneider, F. Stromberg, H. Wende

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current corresponding to the parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by spin-polarized tunneling electrons.

Original languageEnglish
Article number022406
JournalApplied Physics Letters
Volume100
Issue number2
DOIs
StatePublished - 9 Jan 2012
Externally publishedYes

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