Anomalous transport of indirect excitons in coupled AlAs/GaAs quantum wells

L. V. Butov; A. Zrenner; M. Hagn; G. Abstreiter; G. Böhm; G. Weimann

doi:10.1016/0039-6028(96)00394-9

Anomalous transport of indirect excitons in coupled AlAs/GaAs quantum wells

L. V. Butov
, A. Zrenner
, M. Hagn
, G. Abstreiter
, G. Böhm
, G. Weimann

TUM Emeriti of Excellence

Walter Schottky Institut
RAS

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The time-of-flight method has been used to study the transport of indirect excitons in AlAs/GaAs CQW structures at T ≥ 350 mK and B ≤ 14 T. A large increase of the exciton diffusivity is observed at high magnetic fields and low temperatures, when exciton superfluidity is expected to occur.

Original language	English
Pages (from-to)	243-246
Number of pages	4
Journal	Surface Science
Volume	361-362
DOIs	https://doi.org/10.1016/0039-6028(96)00394-9
State	Published - 20 Jul 1996

Keywords

Electrical transport
Photoluminescence
Quantum wells
Semiconductor-semiconductor heterostructures

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10.1016/0039-6028(96)00394-9

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title = "Anomalous transport of indirect excitons in coupled AlAs/GaAs quantum wells",

abstract = "The time-of-flight method has been used to study the transport of indirect excitons in AlAs/GaAs CQW structures at T ≥ 350 mK and B ≤ 14 T. A large increase of the exciton diffusivity is observed at high magnetic fields and low temperatures, when exciton superfluidity is expected to occur.",

keywords = "Electrical transport, Photoluminescence, Quantum wells, Semiconductor-semiconductor heterostructures",

author = "Butov, \{L. V.\} and A. Zrenner and M. Hagn and G. Abstreiter and G. B{\"o}hm and G. Weimann",

year = "1996",

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doi = "10.1016/0039-6028(96)00394-9",

language = "English",

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pages = "243--246",

journal = "Surface Science",

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TY - JOUR

T1 - Anomalous transport of indirect excitons in coupled AlAs/GaAs quantum wells

AU - Butov, L. V.

AU - Zrenner, A.

AU - Hagn, M.

AU - Abstreiter, G.

AU - Böhm, G.

AU - Weimann, G.

PY - 1996/7/20

Y1 - 1996/7/20

N2 - The time-of-flight method has been used to study the transport of indirect excitons in AlAs/GaAs CQW structures at T ≥ 350 mK and B ≤ 14 T. A large increase of the exciton diffusivity is observed at high magnetic fields and low temperatures, when exciton superfluidity is expected to occur.

AB - The time-of-flight method has been used to study the transport of indirect excitons in AlAs/GaAs CQW structures at T ≥ 350 mK and B ≤ 14 T. A large increase of the exciton diffusivity is observed at high magnetic fields and low temperatures, when exciton superfluidity is expected to occur.

KW - Electrical transport

KW - Photoluminescence

KW - Quantum wells

KW - Semiconductor-semiconductor heterostructures

UR - https://www.scopus.com/pages/publications/0030192748

U2 - 10.1016/0039-6028(96)00394-9

DO - 10.1016/0039-6028(96)00394-9

M3 - Article

AN - SCOPUS:0030192748

SN - 0039-6028

VL - 361-362

SP - 243

EP - 246

JO - Surface Science

JF - Surface Science

ER -

Anomalous transport of indirect excitons in coupled AlAs/GaAs quantum wells

Abstract

Keywords

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