Angular dispersion of confined optical phonons in GaAs AlAs superlattices studied by micro-Raman spectroscopy

M. Zunke; R. Schorer; G. Abstreiter; W. Klein; G. Weimann; M. P. Chamberlain

doi:10.1016/0038-1098(94)00771-3

Angular dispersion of confined optical phonons in GaAs AlAs superlattices studied by micro-Raman spectroscopy

M. Zunke, R. Schorer, G. Abstreiter, W. Klein, G. Weimann, M. P. Chamberlain

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Microscopic Raman measurement of the GaAs-like optical phonons of (001)-(GaAs)₈ (AlAs)₈ and - (GaAs)₁₂ (AlAs)₁₂ superlattices are presented. The phonon dispersion with respect to the angle Θ between growth axis of the superlattice and the phonon wavevector is investigated over the whole range from 0° to 90° by scattering from surfaces which were polished under various angles. It is found that the frequencies of confined modes with even symmetry remain constant, whereas the modes with odd symmetry are shifted downwards in frequency with increasing Θ. Frequency gaps in the angular dispersion due to mode anti-crossing are observed. The experimental data are in reasonable agreement with calculations performed within a recently developed continuum model based on linear combinations of LO, TO and interface modes.

Original language	English
Pages (from-to)	847-851
Number of pages	5
Journal	Solid State Communications
Volume	93
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(94)00771-3
State	Published - Mar 1995

Keywords

A. quantum wells
A. semiconductors
D. phonons

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10.1016/0038-1098(94)00771-3

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title = "Angular dispersion of confined optical phonons in GaAs AlAs superlattices studied by micro-Raman spectroscopy",

abstract = "Microscopic Raman measurement of the GaAs-like optical phonons of (001)-(GaAs)8 (AlAs)8 and - (GaAs)12 (AlAs)12 superlattices are presented. The phonon dispersion with respect to the angle Θ between growth axis of the superlattice and the phonon wavevector is investigated over the whole range from 0° to 90° by scattering from surfaces which were polished under various angles. It is found that the frequencies of confined modes with even symmetry remain constant, whereas the modes with odd symmetry are shifted downwards in frequency with increasing Θ. Frequency gaps in the angular dispersion due to mode anti-crossing are observed. The experimental data are in reasonable agreement with calculations performed within a recently developed continuum model based on linear combinations of LO, TO and interface modes.",

keywords = "A. quantum wells, A. semiconductors, D. phonons",

author = "M. Zunke and R. Schorer and G. Abstreiter and W. Klein and G. Weimann and Chamberlain, \{M. P.\}",

year = "1995",

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doi = "10.1016/0038-1098(94)00771-3",

language = "English",

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pages = "847--851",

journal = "Solid State Communications",

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TY - JOUR

T1 - Angular dispersion of confined optical phonons in GaAs AlAs superlattices studied by micro-Raman spectroscopy

AU - Zunke, M.

AU - Schorer, R.

AU - Abstreiter, G.

AU - Klein, W.

AU - Weimann, G.

AU - Chamberlain, M. P.

PY - 1995/3

Y1 - 1995/3

N2 - Microscopic Raman measurement of the GaAs-like optical phonons of (001)-(GaAs)8 (AlAs)8 and - (GaAs)12 (AlAs)12 superlattices are presented. The phonon dispersion with respect to the angle Θ between growth axis of the superlattice and the phonon wavevector is investigated over the whole range from 0° to 90° by scattering from surfaces which were polished under various angles. It is found that the frequencies of confined modes with even symmetry remain constant, whereas the modes with odd symmetry are shifted downwards in frequency with increasing Θ. Frequency gaps in the angular dispersion due to mode anti-crossing are observed. The experimental data are in reasonable agreement with calculations performed within a recently developed continuum model based on linear combinations of LO, TO and interface modes.

AB - Microscopic Raman measurement of the GaAs-like optical phonons of (001)-(GaAs)8 (AlAs)8 and - (GaAs)12 (AlAs)12 superlattices are presented. The phonon dispersion with respect to the angle Θ between growth axis of the superlattice and the phonon wavevector is investigated over the whole range from 0° to 90° by scattering from surfaces which were polished under various angles. It is found that the frequencies of confined modes with even symmetry remain constant, whereas the modes with odd symmetry are shifted downwards in frequency with increasing Θ. Frequency gaps in the angular dispersion due to mode anti-crossing are observed. The experimental data are in reasonable agreement with calculations performed within a recently developed continuum model based on linear combinations of LO, TO and interface modes.

KW - A. quantum wells

KW - A. semiconductors

KW - D. phonons

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U2 - 10.1016/0038-1098(94)00771-3

DO - 10.1016/0038-1098(94)00771-3

M3 - Article

AN - SCOPUS:0029263824

SN - 0038-1098

VL - 93

SP - 847

EP - 851

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Angular dispersion of confined optical phonons in GaAs AlAs superlattices studied by micro-Raman spectroscopy

Abstract

Keywords

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