Analytical solution to Matthews' and Blakeslee's critical dislocation formation thickness of epitaxially grown thin films

A. Braun, K. M. Briggs, P. Böni

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

For the first time, an analytical expression for the critical thickness for the onset of misfit dislocations as established by Matthews and Blakeslee is presented. It is the so-called Lambert W function which reflects the curvature of this critical thickness. With the arrive of the analytical solution, expressions of arbitrary complexity that involve the critical thickness can be handled much more easily. Its practical application is demonstrated by implementation of Vegard's rule.

Original languageEnglish
Pages (from-to)231-234
Number of pages4
JournalJournal of Crystal Growth
Volume241
Issue number1-2
DOIs
StatePublished - May 2002

Keywords

  • A1. Computer simulation
  • A1. Critical thickness
  • A1. Defects
  • A2. Growth models
  • A3. Atomic layer epitaxy

Fingerprint

Dive into the research topics of 'Analytical solution to Matthews' and Blakeslee's critical dislocation formation thickness of epitaxially grown thin films'. Together they form a unique fingerprint.

Cite this