TY - JOUR
T1 - Analytical solution to Matthews' and Blakeslee's critical dislocation formation thickness of epitaxially grown thin films
AU - Braun, A.
AU - Briggs, K. M.
AU - Böni, P.
PY - 2002/5
Y1 - 2002/5
N2 - For the first time, an analytical expression for the critical thickness for the onset of misfit dislocations as established by Matthews and Blakeslee is presented. It is the so-called Lambert W function which reflects the curvature of this critical thickness. With the arrive of the analytical solution, expressions of arbitrary complexity that involve the critical thickness can be handled much more easily. Its practical application is demonstrated by implementation of Vegard's rule.
AB - For the first time, an analytical expression for the critical thickness for the onset of misfit dislocations as established by Matthews and Blakeslee is presented. It is the so-called Lambert W function which reflects the curvature of this critical thickness. With the arrive of the analytical solution, expressions of arbitrary complexity that involve the critical thickness can be handled much more easily. Its practical application is demonstrated by implementation of Vegard's rule.
KW - A1. Computer simulation
KW - A1. Critical thickness
KW - A1. Defects
KW - A2. Growth models
KW - A3. Atomic layer epitaxy
UR - http://www.scopus.com/inward/record.url?scp=0036565856&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(02)00941-7
DO - 10.1016/S0022-0248(02)00941-7
M3 - Article
AN - SCOPUS:0036565856
SN - 0022-0248
VL - 241
SP - 231
EP - 234
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-2
ER -