TY - GEN
T1 - Analysis of the latch-up process and current filamentation in high-voltage trench-IGBT cell arrays
AU - Toechterle, C.
AU - Pfirsch, F.
AU - Sandow, C.
AU - Wachutka, G.
PY - 2013
Y1 - 2013
N2 - We present a theoretical analysis of the formation of current filaments leading to the latch-up state that can occur during the turn-off process in a cell array of high-voltage (3.3 kV) trench insulated-gate bipolar transistors (trench IGBTs). Our investigations, based on self-consistent physical device simulations, aim at understanding the behavior of multiple cells, i.e. parallel cells as well as integrated structures, during overcurrent turnoff by studying the behavior of a representative single cell under identical conditions. With these insights we are able to analyse the latch-up mechanism itself as well as its consequences for the robustness of the device against latch-up. Furthermore, we gain an understanding of the formation of current filaments inside IGBT cells and their relation to device latch-up.
AB - We present a theoretical analysis of the formation of current filaments leading to the latch-up state that can occur during the turn-off process in a cell array of high-voltage (3.3 kV) trench insulated-gate bipolar transistors (trench IGBTs). Our investigations, based on self-consistent physical device simulations, aim at understanding the behavior of multiple cells, i.e. parallel cells as well as integrated structures, during overcurrent turnoff by studying the behavior of a representative single cell under identical conditions. With these insights we are able to analyse the latch-up mechanism itself as well as its consequences for the robustness of the device against latch-up. Furthermore, we gain an understanding of the formation of current filaments inside IGBT cells and their relation to device latch-up.
UR - https://www.scopus.com/pages/publications/84891070559
U2 - 10.1109/SISPAD.2013.6650633
DO - 10.1109/SISPAD.2013.6650633
M3 - Conference contribution
AN - SCOPUS:84891070559
SN - 9781467357364
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 296
EP - 299
BT - 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
T2 - 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Y2 - 3 September 2013 through 5 September 2013
ER -