Analysis of the latch-up process and current filamentation in high-voltage trench-IGBT cell arrays

C. Toechterle, F. Pfirsch, C. Sandow, G. Wachutka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

We present a theoretical analysis of the formation of current filaments leading to the latch-up state that can occur during the turn-off process in a cell array of high-voltage (3.3 kV) trench insulated-gate bipolar transistors (trench IGBTs). Our investigations, based on self-consistent physical device simulations, aim at understanding the behavior of multiple cells, i.e. parallel cells as well as integrated structures, during overcurrent turnoff by studying the behavior of a representative single cell under identical conditions. With these insights we are able to analyse the latch-up mechanism itself as well as its consequences for the robustness of the device against latch-up. Furthermore, we gain an understanding of the formation of current filaments inside IGBT cells and their relation to device latch-up.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages296-299
Number of pages4
DOIs
StatePublished - 2013
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 3 Sep 20135 Sep 2013

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Country/TerritoryUnited Kingdom
CityGlasgow
Period3/09/135/09/13

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