Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 µm

G. K. Veerabathran; S. Sprengel; A. Andrejew; M. C. Amann

doi:10.1109/IPCon.2017.8116083

Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 µm

G. K. Veerabathran, S. Sprengel, A. Andrejew, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

GaSb-based electrically-pumped vertical-cavity surface-emitting lasers at 3.93 µm, using type-II quantum wells are analyzed. Current broadening due to radial diffusion of carriers in the active region is estimated to be 4.2 µm and this is determined to be a major factor in limiting their performance.

Original language	English
Title of host publication	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	229-230
Number of pages	2
ISBN (Electronic)	9781509065783
DOIs	https://doi.org/10.1109/IPCon.2017.8116083
State	Published - 20 Nov 2017
Event	30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States Duration: 1 Oct 2017 → 5 Oct 2017

Publication series

Name	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume	2017-January

Conference

Conference	30th Annual Conference of the IEEE Photonics Society, IPC 2017
Country/Territory	United States
City	Lake Buena Vista
Period	1/10/17 → 5/10/17

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10.1109/IPCon.2017.8116083

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Veerabathran, G. K., Sprengel, S., Andrejew, A., & Amann, M. C. (2017). Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 µm. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 (pp. 229-230). (30th Annual Conference of the IEEE Photonics Society, IPC 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2017.8116083

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title = "Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 µm",

abstract = "GaSb-based electrically-pumped vertical-cavity surface-emitting lasers at 3.93 µm, using type-II quantum wells are analyzed. Current broadening due to radial diffusion of carriers in the active region is estimated to be 4.2 µm and this is determined to be a major factor in limiting their performance.",

author = "Veerabathran, \{G. K.\} and S. Sprengel and A. Andrejew and Amann, \{M. C.\}",

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doi = "10.1109/IPCon.2017.8116083",

language = "English",

series = "30th Annual Conference of the IEEE Photonics Society, IPC 2017",

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Veerabathran, GK, Sprengel, S, Andrejew, A & Amann, MC 2017, Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 µm. in 30th Annual Conference of the IEEE Photonics Society, IPC 2017. 30th Annual Conference of the IEEE Photonics Society, IPC 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 229-230, 30th Annual Conference of the IEEE Photonics Society, IPC 2017, Lake Buena Vista, United States, 1/10/17. https://doi.org/10.1109/IPCon.2017.8116083

Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 µm. / Veerabathran, G. K.; Sprengel, S.; Andrejew, A. et al.
30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 229-230 (30th Annual Conference of the IEEE Photonics Society, IPC 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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PY - 2017/11/20

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AB - GaSb-based electrically-pumped vertical-cavity surface-emitting lasers at 3.93 µm, using type-II quantum wells are analyzed. Current broadening due to radial diffusion of carriers in the active region is estimated to be 4.2 µm and this is determined to be a major factor in limiting their performance.

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BT - 30th Annual Conference of the IEEE Photonics Society, IPC 2017

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Y2 - 1 October 2017 through 5 October 2017

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Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 µm

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