Analysis of a pin photodiode with integrated waveguide

M. C. Amann

doi:10.1049/el:19870633

Analysis of a pin photodiode with integrated waveguide

M. C. Amann

Siemens AG

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The absorption coefficient of an InGaAs PIN photodiode integrated with an InGaAsP-InP waveguide is analysed by means of the mode-matching technique. The results compare excellently to published data for X = 1-3 jan. It is shown that by an optimised device structure the absorption coefficient can be increased to about 0.15dBμm, enabling reduced detector length and smaller capacitance.

Original language	English
Pages (from-to)	895-897
Number of pages	3
Journal	Electronics Letters
Volume	23
Issue number	17
DOIs	https://doi.org/10.1049/el:19870633
State	Published - 1987
Externally published	Yes

Keywords

Integrated optics
Optical waveguides
Optoelectronics

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10.1049/el:19870633

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title = "Analysis of a pin photodiode with integrated waveguide",

abstract = "The absorption coefficient of an InGaAs PIN photodiode integrated with an InGaAsP-InP waveguide is analysed by means of the mode-matching technique. The results compare excellently to published data for X = 1-3 jan. It is shown that by an optimised device structure the absorption coefficient can be increased to about 0.15dBμm, enabling reduced detector length and smaller capacitance.",

keywords = "Integrated optics, Optical waveguides, Optoelectronics",

author = "Amann, {M. C.}",

year = "1987",

doi = "10.1049/el:19870633",

language = "English",

volume = "23",

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journal = "Electronics Letters",

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T1 - Analysis of a pin photodiode with integrated waveguide

AU - Amann, M. C.

PY - 1987

Y1 - 1987

N2 - The absorption coefficient of an InGaAs PIN photodiode integrated with an InGaAsP-InP waveguide is analysed by means of the mode-matching technique. The results compare excellently to published data for X = 1-3 jan. It is shown that by an optimised device structure the absorption coefficient can be increased to about 0.15dBμm, enabling reduced detector length and smaller capacitance.

AB - The absorption coefficient of an InGaAs PIN photodiode integrated with an InGaAsP-InP waveguide is analysed by means of the mode-matching technique. The results compare excellently to published data for X = 1-3 jan. It is shown that by an optimised device structure the absorption coefficient can be increased to about 0.15dBμm, enabling reduced detector length and smaller capacitance.

KW - Integrated optics

KW - Optical waveguides

KW - Optoelectronics

UR - http://www.scopus.com/inward/record.url?scp=0023391660&partnerID=8YFLogxK

U2 - 10.1049/el:19870633

DO - 10.1049/el:19870633

M3 - Article

AN - SCOPUS:0023391660

SN - 0013-5194

VL - 23

SP - 895

EP - 897

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

Analysis of a pin photodiode with integrated waveguide

Abstract

Keywords

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