Analysis of a pin photodiode with integrated waveguide

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The absorption coefficient of an InGaAs PIN photodiode integrated with an InGaAsP-InP waveguide is analysed by means of the mode-matching technique. The results compare excellently to published data for X = 1-3 jan. It is shown that by an optimised device structure the absorption coefficient can be increased to about 0.15dBμm, enabling reduced detector length and smaller capacitance.

Original languageEnglish
Pages (from-to)895-897
Number of pages3
JournalElectronics Letters
Issue number17
StatePublished - 1987
Externally publishedYes


  • Integrated optics
  • Optical waveguides
  • Optoelectronics


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