Analysis and Characterization of Defects in FeFETs

Emerging devices are susceptible to manufacturing defects due to immature fabrication processes. Ferroelectric field-effect transistors, referred to as FeFETs, are promising emerging devices, but the impact of manufacturing imperfections on these devices has yet to be studied. Thus, we combine a technology CAD (TCAD) model with a fault-injection technique to represent fabrication defects in a FeFET. The TCAD model is calibrated against a fabricated metal-ferroelectric-metal capacitor and uses a multi-domain ferroelectric-layer structure. We address two classes of defects in the ferroelectric layer and map them to stuck-at-fault models referred to as neutral faults (SAP°) and stuck-at-plus and stuck-at-minus (SAP⁺ and SAP^-) faults. We also develop a machine-learning (ML) framework to characterize these fault-injected FeFET devices. The ML framework provides a significant speedup in predicting the health of the FE layer as compared to computationally heavy TCAD simulations. Our study of defects in ferroelectric FET (FeFET), which is done for the first time, and the insights gained thereof can provide valuable feedback for the fabrication and yield learning of FeFET-based circuits.