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Analog design challenges and trade-offs using emerging materials and devices

  • M. Fulde
  • , A. Mercha
  • , C. Gustin
  • , B. Parvais
  • , V. Subramanian
  • , K. V. Arnim
  • , F. Bauer
  • , K. Schruefer
  • , D. Schmitt-Landsiedel
  • , G. Knoblingert

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and VT stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO2 dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient VT instabilities in the range of 10mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.

Original languageEnglish
Title of host publicationESSDERC - 2007 37th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages123-126
Number of pages4
ISBN (Print)1424411238, 9781424411238
DOIs
StatePublished - 2007
EventESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany
Duration: 11 Sep 200713 Sep 2007

Publication series

NameESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
Volume2007

Conference

ConferenceESSDERC 2007 - 37th European Solid-State Device Research Conference
Country/TerritoryGermany
CityMunich
Period11/09/0713/09/07

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