Analog design challenges and trade-offs using emerging materials and devices

M. Fulde; A. Mercha; C. Gustin; B. Parvais; V. Subramanian; K. V. Arnim; F. Bauer; K. Schruefer; D. Schmitt-Landsiedel; G. Knoblingert

doi:10.1109/ESSCIRC.2007.4430261

Analog design challenges and trade-offs using emerging materials and devices

M. Fulde, A. Mercha, C. Gustin, B. Parvais, V. Subramanian, K. V. Arnim, F. Bauer, K. Schruefer, D. Schmitt-Landsiedel, G. Knoblingert

Medicine and Health

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and V_T stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO₂ dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient VT instabilities in the range of 10mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.

Original language	English
Title of host publication	ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	123-126
Number of pages	4
ISBN (Print)	1424411254, 9781424411252
DOIs	https://doi.org/10.1109/ESSCIRC.2007.4430261
State	Published - 2007
Event	ESSCIRC 2007 - 33rd European Solid-State Circuits Conference - Munich, Germany Duration: 11 Sep 2007 → 13 Sep 2007

Publication series

Name	ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

Conference

Conference	ESSCIRC 2007 - 33rd European Solid-State Circuits Conference
Country/Territory	Germany
City	Munich
Period	11/09/07 → 13/09/07

Access to Document

10.1109/ESSCIRC.2007.4430261

Cite this

Fulde, M., Mercha, A., Gustin, C., Parvais, B., Subramanian, V., Arnim, K. V., Bauer, F., Schruefer, K., Schmitt-Landsiedel, D., & Knoblingert, G. (2007). Analog design challenges and trade-offs using emerging materials and devices. In ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference (pp. 123-126). Article 4430261 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ESSCIRC.2007.4430261

@inproceedings{7f6438ad783e41b08045789cfbb1b493,

title = "Analog design challenges and trade-offs using emerging materials and devices",

abstract = "Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and VT stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO2 dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient VT instabilities in the range of 10mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.",

author = "M. Fulde and A. Mercha and C. Gustin and B. Parvais and V. Subramanian and Arnim, {K. V.} and F. Bauer and K. Schruefer and D. Schmitt-Landsiedel and G. Knoblingert",

year = "2007",

doi = "10.1109/ESSCIRC.2007.4430261",

language = "English",

isbn = "1424411254",

series = "ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "123--126",

booktitle = "ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference",

note = "ESSCIRC 2007 - 33rd European Solid-State Circuits Conference ; Conference date: 11-09-2007 Through 13-09-2007",

}

Fulde, M, Mercha, A, Gustin, C, Parvais, B, Subramanian, V, Arnim, KV, Bauer, F, Schruefer, K, Schmitt-Landsiedel, D & Knoblingert, G 2007, Analog design challenges and trade-offs using emerging materials and devices. in ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference., 4430261, ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 123-126, ESSCIRC 2007 - 33rd European Solid-State Circuits Conference, Munich, Germany, 11/09/07. https://doi.org/10.1109/ESSCIRC.2007.4430261

Analog design challenges and trade-offs using emerging materials and devices. / Fulde, M.; Mercha, A.; Gustin, C. et al.
ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2007. p. 123-126 4430261 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analog design challenges and trade-offs using emerging materials and devices

AU - Fulde, M.

AU - Mercha, A.

AU - Gustin, C.

AU - Parvais, B.

AU - Subramanian, V.

AU - Arnim, K. V.

AU - Bauer, F.

AU - Schruefer, K.

AU - Schmitt-Landsiedel, D.

AU - Knoblingert, G.

PY - 2007

Y1 - 2007

N2 - Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and VT stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO2 dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient VT instabilities in the range of 10mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.

AB - Analog device figures-of-merit change significantly with the introduction of advanced materials and devices such as high-k or Multiple-Gate FETs. Measurements show enhanced intrinsic gain and matching behavior for MuGFETs which help to reduce area and power consumption in analog circuits. However, high-k degrades matching, flicker noise and VT stability. Measured device performance is used to simulate the impact of these trends on circuit design trade-offs. Migrating from SiON to HfO2 dielectric approximately doubles area and power consumption to keep matching and noise performance constant. Transient VT instabilities in the range of 10mV can degrade the resolution of analog-to-digital converters by more than one bit. The use of non-binary ADCs is proposed to overcome these issues.

UR - http://www.scopus.com/inward/record.url?scp=44849110272&partnerID=8YFLogxK

U2 - 10.1109/ESSCIRC.2007.4430261

DO - 10.1109/ESSCIRC.2007.4430261

M3 - Conference contribution

AN - SCOPUS:44849110272

SN - 1424411254

SN - 9781424411252

T3 - ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

SP - 123

EP - 126

BT - ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - ESSCIRC 2007 - 33rd European Solid-State Circuits Conference

Y2 - 11 September 2007 through 13 September 2007

ER -

Fulde M, Mercha A, Gustin C, Parvais B, Subramanian V, Arnim KV et al. Analog design challenges and trade-offs using emerging materials and devices. In ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2007. p. 123-126. 4430261. (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference). doi: 10.1109/ESSCIRC.2007.4430261

Analog design challenges and trade-offs using emerging materials and devices

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this