Analog and RF design issues in high-k & multi-gate CMOS technologies

M. Fulde, D. Schmitt-Landsiedel, G. Knoblinger

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

High-k, metal gate devices and furthermore multi-gate FETs (MuGFETs) are considered as promising solution for scaling down to 32nm, 22nm and 16nm overcoming the limitations of conventional planar bulk. Especially analog, mixed-signal and RF device and circuit performance is affected by these revolutionary changes in technology. This paper discusses different examples for novel, technology related design issues focused on analog, mixed-signal and RF applications.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages18.3.1
DOIs
StatePublished - 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 7 Dec 20099 Dec 2009

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2009 International Electron Devices Meeting, IEDM 2009
Country/TerritoryUnited States
CityBaltimore, MD
Period7/12/099/12/09

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