Abstract
RRAM devices have recently seen wide-spread adoption into applications such as neural networks and storage elements since their inherent non-volatility and multi-bit-capability renders them a possible candidate for mitigating the von-Neumann bottleneck. Researchers often face difficulties when developing edge devices, since dealing with sensors detecting parameters such as humidity or temperature often requires large and power-consuming ADCs. We propose a possible mitigation, namely using a RRAM device in combination with a comparator circuit to form a basic block for threshold detection. This can be expanded towards programmable non-uniform sampling ADCs, significantly reducing both area and power consumption since significantly smaller bit-resolutions are required. We demonstrate how a comparator circuit designed in 130 nm technology can be reprogrammed by programming the incorporated RRAM device. Our proposed building block consumes 83 μW.
Original language | English |
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Pages (from-to) | 39-51 |
Number of pages | 13 |
Journal | IT - Information Technology |
Volume | 65 |
Issue number | 1-2 |
DOIs | |
State | Published - 1 May 2023 |
Keywords
- ADC
- CMOS circuit
- comparator
- memristor
- non-uniform sampling
- sensors