Abstract
We present an electroluminescence (EL) and transport study of the tunnelling mechanisms in GaAs/AlAs/GaAs single barrier p-i-n tunnelling structures. We show that both Γ-X and X-Γ tunnelling processes arise from either elastic transfer involving the longitudinal Xz barrier states, or momentum conserving phonon assisted transfer involving transverse Xxy states. The tunnelling process is shown to be very strongly sequential.
| Original language | English |
|---|---|
| Pages (from-to) | 197-200 |
| Number of pages | 4 |
| Journal | Surface Science |
| Volume | 361-362 |
| DOIs | |
| State | Published - 20 Jul 1996 |
| Externally published | Yes |
Keywords
- Heterostructures
- Semiconductor
- Tunnelling
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