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An optical and electrical study of tunnelling mechanisms through indirect gap single barrier GaAs/AlAs/GaAs heterostructures

  • J. J. Finley
  • , R. J. Teissier
  • , M. S. Skolnick
  • , J. W. Cockburn
  • , R. Grey
  • , G. Hill
  • , M. A. Pate
  • University of Sheffield
  • Lab. Microstructures Microlectron.

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We present an electroluminescence (EL) and transport study of the tunnelling mechanisms in GaAs/AlAs/GaAs single barrier p-i-n tunnelling structures. We show that both Γ-X and X-Γ tunnelling processes arise from either elastic transfer involving the longitudinal Xz barrier states, or momentum conserving phonon assisted transfer involving transverse Xxy states. The tunnelling process is shown to be very strongly sequential.

Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalSurface Science
Volume361-362
DOIs
StatePublished - 20 Jul 1996
Externally publishedYes

Keywords

  • Heterostructures
  • Semiconductor
  • Tunnelling

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