An I-Q mixer at 76.5 GHz using flip-chip mounted silicon Schottky diodes

Martin M. Kaleja; Arnold J. Herb; Ralph H. Rasshofer; Erwin M. Biebl

An I-Q mixer at 76.5 GHz using flip-chip mounted silicon Schottky diodes

Martin M. Kaleja, Arnold J. Herb, Ralph H. Rasshofer, Erwin M. Biebl

Associate Professorship of Very High Frequency Technology

Technical University of Munich

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

Silicon Schottky diodes show the advantages of low 1/f noise combined with low cost. We use these diodes in hybrid flip-chip configuration to build a novel I-Q mixer at 76.5 GHz for automotive applications. The realized mixer shows promising features such as 10 dB conversion loss @ 100 kHz IF, LO-to-RF isolation better than 25 dB, and average IF noise power of -80 dBm.

Original language	English
Pages (from-to)	1653-1656
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
State	Published - 2001
Event	International Microwave Symposium Digest IEEE MTT-S 2001 - Phoenix, AZ, United States Duration: 20 May 2001 → 25 May 2001

Cite this

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title = "An I-Q mixer at 76.5 GHz using flip-chip mounted silicon Schottky diodes",

abstract = "Silicon Schottky diodes show the advantages of low 1/f noise combined with low cost. We use these diodes in hybrid flip-chip configuration to build a novel I-Q mixer at 76.5 GHz for automotive applications. The realized mixer shows promising features such as 10 dB conversion loss @ 100 kHz IF, LO-to-RF isolation better than 25 dB, and average IF noise power of -80 dBm.",

author = "Kaleja, {Martin M.} and Herb, {Arnold J.} and Rasshofer, {Ralph H.} and Biebl, {Erwin M.}",

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AU - Kaleja, Martin M.

AU - Herb, Arnold J.

AU - Rasshofer, Ralph H.

AU - Biebl, Erwin M.

PY - 2001

Y1 - 2001

N2 - Silicon Schottky diodes show the advantages of low 1/f noise combined with low cost. We use these diodes in hybrid flip-chip configuration to build a novel I-Q mixer at 76.5 GHz for automotive applications. The realized mixer shows promising features such as 10 dB conversion loss @ 100 kHz IF, LO-to-RF isolation better than 25 dB, and average IF noise power of -80 dBm.

AB - Silicon Schottky diodes show the advantages of low 1/f noise combined with low cost. We use these diodes in hybrid flip-chip configuration to build a novel I-Q mixer at 76.5 GHz for automotive applications. The realized mixer shows promising features such as 10 dB conversion loss @ 100 kHz IF, LO-to-RF isolation better than 25 dB, and average IF noise power of -80 dBm.

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M3 - Conference article

AN - SCOPUS:0035686265

SN - 0149-645X

VL - 1

SP - 1653

EP - 1656

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - International Microwave Symposium Digest IEEE MTT-S 2001

Y2 - 20 May 2001 through 25 May 2001

ER -

An I-Q mixer at 76.5 GHz using flip-chip mounted silicon Schottky diodes

Abstract

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