An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

J. G. Keizer; E. C. Clark; M. Bichler; G. Abstreiter; J. J. Finley; P. M. Koenraad

doi:10.1088/0957-4484/21/21/215705

An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

J. G. Keizer, E. C. Clark, M. Bichler, G. Abstreiter, J. J. Finley, P. M. Koenraad

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer.

Original language	English
Article number	215705
Journal	Nanotechnology
Volume	21
Issue number	21
DOIs	https://doi.org/10.1088/0957-4484/21/21/215705
State	Published - 2010

Access to Document

10.1088/0957-4484/21/21/215705

Cite this

@article{62e248bc57514f8783c9efa6c769b610,

title = "An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step",

abstract = "In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer.",

author = "Keizer, {J. G.} and Clark, {E. C.} and M. Bichler and G. Abstreiter and Finley, {J. J.} and Koenraad, {P. M.}",

year = "2010",

doi = "10.1088/0957-4484/21/21/215705",

language = "English",

volume = "21",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "21",

}

TY - JOUR

T1 - An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

AU - Keizer, J. G.

AU - Clark, E. C.

AU - Bichler, M.

AU - Abstreiter, G.

AU - Finley, J. J.

AU - Koenraad, P. M.

PY - 2010

Y1 - 2010

N2 - In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer.

AB - In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer.

UR - http://www.scopus.com/inward/record.url?scp=77951861143&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/21/21/215705

DO - 10.1088/0957-4484/21/21/215705

M3 - Article

AN - SCOPUS:77951861143

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

IS - 21

M1 - 215705

ER -

An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

Abstract

Access to Document

Other files and links

Fingerprint

Cite this