An analog perspective on device reliability in 32nm high-k metal gate technology

Florian Raoul Chouard, Shailesh More, Michael Fulde, Doris Schmitt-Landsiedel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

An assessment on analog circuit reliability for an advanced 32nm high-k metal gate technology is given from the analog designer's point of view. Selected analog circuit blocks are investigated with respect to device stress states. A custom test structure, designed to reveal analog related device characteristics including relaxation effects, was used to perform stress measurements. In addition to common aging in inversion mode, degradation in accumulation mode is determined. Experiments reveal that relaxation shows a large variety in drift behavior, and degradation induced variations - even for analog size devices - can reach significant values. Both topics are main issues for analog circuits design. Thereupon a general approach to consider device aging for analog circuit reliability is proposed.

Original languageEnglish
Title of host publicationProceedings of the 2011 IEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2011
Pages65-70
Number of pages6
DOIs
StatePublished - 2011
Event14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2011 - Cottbus, Germany
Duration: 13 Apr 201115 Apr 2011

Publication series

NameProceedings of the 2011 IEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2011

Conference

Conference14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2011
Country/TerritoryGermany
CityCottbus
Period13/04/1115/04/11

Keywords

  • aging
  • analog
  • circuit reliability
  • degradation
  • NBTI
  • PBTI

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