TY - JOUR
T1 - Amorphous silicon suboxide light-emitting diodes
AU - Janssen, R.
AU - Karrer, U.
AU - Dimova-Malinovska, D.
AU - Stutzmann, M.
PY - 1998/5
Y1 - 1998/5
N2 - Optical absorption was measured on undoped as deposited and annealed amorphous silicon suboxide (a-SiOx:H) samples prepared by plasma enhanced chemical vapour deposition. The subgap absorption was reduced by one order of magnitude upon annealing. Annealing of a-SiOx:H p-i-n structures at 250°C increased the forward current densities and shifted the dominant electroluminescence peak from 1.1 eV to 1.3 eV, indicating a change in the recombination mechanism due to a lower defect density in the intrinsic layer. The total electroluminescence efficiency increased by a factor of 3 upon annealing and reached ∼ 10-3%.
AB - Optical absorption was measured on undoped as deposited and annealed amorphous silicon suboxide (a-SiOx:H) samples prepared by plasma enhanced chemical vapour deposition. The subgap absorption was reduced by one order of magnitude upon annealing. Annealing of a-SiOx:H p-i-n structures at 250°C increased the forward current densities and shifted the dominant electroluminescence peak from 1.1 eV to 1.3 eV, indicating a change in the recombination mechanism due to a lower defect density in the intrinsic layer. The total electroluminescence efficiency increased by a factor of 3 upon annealing and reached ∼ 10-3%.
KW - Amorphous silicon suboxide
KW - Diodes
KW - Optical absorption
UR - http://www.scopus.com/inward/record.url?scp=0032066991&partnerID=8YFLogxK
U2 - 10.1016/S0022-3093(98)00249-X
DO - 10.1016/S0022-3093(98)00249-X
M3 - Article
AN - SCOPUS:0032066991
SN - 0022-3093
VL - 227-230
SP - 1151
EP - 1155
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 2
ER -