Amorphisation processes in silicon

Gerhard Müller

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Amorphisation damage, a by-product of the ion-implantation process, has plagued silicon device technologists for more than three decades. More recently, physicists have become aware of the fact that ion bombardment of amorphised silicon represents an ideal model system for elucidating fundamental properties of both pure and hydrogenated silicon random networks.

Original languageEnglish
Pages (from-to)364-370
Number of pages7
JournalCurrent Opinion in Solid State and Materials Science
Volume3
Issue number4
DOIs
StatePublished - Aug 1998
Externally publishedYes

Keywords

  • A-Si amorphous silicon
  • C-Si crystalline silicon
  • EOR end-of-range
  • TED transient enhanced diffusion
  • VLSI very-large-scale integrated
  • XAFS X-ray absorption fine structure

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