Aluminum-induced crystallization of amorphous silicon-germanium thin films

M. Gjukic; M. Buschbeck; R. Lechner; M. Stutzmann

doi:10.1063/1.1789245

Aluminum-induced crystallization of amorphous silicon-germanium thin films

M. Gjukic, M. Buschbeck, R. Lechner, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

The application of aluminum-induced layer exchange (ALILE) to crystallize amorphous silicon-germanium alloys to study the fabrication of poly Si _1-x Ge_x layers on glass was discussed. It was observed that the bilayer structure of aluminum was deposited on quartz substrates and were annealed below the eutectic temperature of the binary Al-Ge alloy. Two techniques, elastic recoil detection and Raman spectroscopy were also used for structural characterization. The results show that the ALILE method was suitable for the deposition of large area poly-Si_1-x thin films on the glass substrates.

Original language	English
Pages (from-to)	2134-2136
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1789245
State	Published - 13 Sep 2004

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abstract = "The application of aluminum-induced layer exchange (ALILE) to crystallize amorphous silicon-germanium alloys to study the fabrication of poly Si 1-x Gex layers on glass was discussed. It was observed that the bilayer structure of aluminum was deposited on quartz substrates and were annealed below the eutectic temperature of the binary Al-Ge alloy. Two techniques, elastic recoil detection and Raman spectroscopy were also used for structural characterization. The results show that the ALILE method was suitable for the deposition of large area poly-Si1-x thin films on the glass substrates.",

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AU - Buschbeck, M.

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AU - Stutzmann, M.

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AB - The application of aluminum-induced layer exchange (ALILE) to crystallize amorphous silicon-germanium alloys to study the fabrication of poly Si 1-x Gex layers on glass was discussed. It was observed that the bilayer structure of aluminum was deposited on quartz substrates and were annealed below the eutectic temperature of the binary Al-Ge alloy. Two techniques, elastic recoil detection and Raman spectroscopy were also used for structural characterization. The results show that the ALILE method was suitable for the deposition of large area poly-Si1-x thin films on the glass substrates.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Aluminum-induced crystallization of amorphous silicon-germanium thin films

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