AlN/Diamond np-junctions

Christoph E. Nebel, Claudio R. Miskys, Jose A. Garrido, Martin Hermann, Oliver Ambacher, Martin Eickhoff, Martin Stutzmann

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

The first aluminum nitride/diamond heterojunction light-emitting diode is realized by plasma-induced molecular beam epitaxy. The pn heterojunction consists of a silicon doped AlN (n-type) epitaxial film on (100) naturally boron-doped (p-type) diamond substrate. The diode shows excellent rectifying properties with intense light emission in the spectral range of approximately 2.7 and 4.8 eV. Heterojunctions manufactured from AlGaN alloys and diamond hold great promise for new applications in optoelectronics as well as in high frequency and high power electronics.

Original languageEnglish
Pages (from-to)1873-1876
Number of pages4
JournalDiamond and Related Materials
Volume12
Issue number10-11
DOIs
StatePublished - 2003

Keywords

  • AlGaN alloys
  • Plasma-induced molecular beam epitaxy (PIMBE)
  • Pn Heterojunction

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