AlN/Diamond np-junctions

Christoph E. Nebel; Claudio R. Miskys; Jose A. Garrido; Martin Hermann; Oliver Ambacher; Martin Eickhoff; Martin Stutzmann

doi:10.1016/S0925-9635(03)00313-3

AlN/Diamond np-junctions

Christoph E. Nebel, Claudio R. Miskys, Jose A. Garrido, Martin Hermann, Oliver Ambacher, Martin Eickhoff, Martin Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The first aluminum nitride/diamond heterojunction light-emitting diode is realized by plasma-induced molecular beam epitaxy. The pn heterojunction consists of a silicon doped AlN (n-type) epitaxial film on (100) naturally boron-doped (p-type) diamond substrate. The diode shows excellent rectifying properties with intense light emission in the spectral range of approximately 2.7 and 4.8 eV. Heterojunctions manufactured from AlGaN alloys and diamond hold great promise for new applications in optoelectronics as well as in high frequency and high power electronics.

Original language	English
Pages (from-to)	1873-1876
Number of pages	4
Journal	Diamond and Related Materials
Volume	12
Issue number	10-11
DOIs	https://doi.org/10.1016/S0925-9635(03)00313-3
State	Published - 2003

Keywords

AlGaN alloys
Plasma-induced molecular beam epitaxy (PIMBE)
Pn Heterojunction

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10.1016/S0925-9635(03)00313-3

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title = "AlN/Diamond np-junctions",

abstract = "The first aluminum nitride/diamond heterojunction light-emitting diode is realized by plasma-induced molecular beam epitaxy. The pn heterojunction consists of a silicon doped AlN (n-type) epitaxial film on (100) naturally boron-doped (p-type) diamond substrate. The diode shows excellent rectifying properties with intense light emission in the spectral range of approximately 2.7 and 4.8 eV. Heterojunctions manufactured from AlGaN alloys and diamond hold great promise for new applications in optoelectronics as well as in high frequency and high power electronics.",

keywords = "AlGaN alloys, Plasma-induced molecular beam epitaxy (PIMBE), Pn Heterojunction",

author = "Nebel, {Christoph E.} and Miskys, {Claudio R.} and Garrido, {Jose A.} and Martin Hermann and Oliver Ambacher and Martin Eickhoff and Martin Stutzmann",

year = "2003",

doi = "10.1016/S0925-9635(03)00313-3",

language = "English",

volume = "12",

pages = "1873--1876",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

number = "10-11",

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TY - JOUR

T1 - AlN/Diamond np-junctions

AU - Nebel, Christoph E.

AU - Miskys, Claudio R.

AU - Garrido, Jose A.

AU - Hermann, Martin

AU - Ambacher, Oliver

AU - Eickhoff, Martin

AU - Stutzmann, Martin

PY - 2003

Y1 - 2003

N2 - The first aluminum nitride/diamond heterojunction light-emitting diode is realized by plasma-induced molecular beam epitaxy. The pn heterojunction consists of a silicon doped AlN (n-type) epitaxial film on (100) naturally boron-doped (p-type) diamond substrate. The diode shows excellent rectifying properties with intense light emission in the spectral range of approximately 2.7 and 4.8 eV. Heterojunctions manufactured from AlGaN alloys and diamond hold great promise for new applications in optoelectronics as well as in high frequency and high power electronics.

AB - The first aluminum nitride/diamond heterojunction light-emitting diode is realized by plasma-induced molecular beam epitaxy. The pn heterojunction consists of a silicon doped AlN (n-type) epitaxial film on (100) naturally boron-doped (p-type) diamond substrate. The diode shows excellent rectifying properties with intense light emission in the spectral range of approximately 2.7 and 4.8 eV. Heterojunctions manufactured from AlGaN alloys and diamond hold great promise for new applications in optoelectronics as well as in high frequency and high power electronics.

KW - AlGaN alloys

KW - Plasma-induced molecular beam epitaxy (PIMBE)

KW - Pn Heterojunction

UR - http://www.scopus.com/inward/record.url?scp=0348011388&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(03)00313-3

DO - 10.1016/S0925-9635(03)00313-3

M3 - Article

AN - SCOPUS:0348011388

SN - 0925-9635

VL - 12

SP - 1873

EP - 1876

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 10-11

ER -

AlN/Diamond np-junctions

Abstract

Keywords

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