AlN/diamond heterojunction diodes

C. R. Miskys; J. A. Garrido; C. E. Nebel; M. Hermann; O. Ambacher; M. Eickhoff; M. Stutzmann

doi:10.1063/1.1532545

AlN/diamond heterojunction diodes

C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

90 Scopus citations

Abstract

Epitaxial wurzite (0001) AlN:Si (n-type) was grown on (100) naturally boron-doped diamond (p-type) substrates. The fabricated p-n heterojunction diodes showed clear diode characteristics with rectifying ratios between 10³ and 10⁴ at low voltages. The results confirmed the viability of heteroepitaxial growth of III-nitrides on diamond.

Original language	English
Pages (from-to)	290-292
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	2
DOIs	https://doi.org/10.1063/1.1532545
State	Published - 13 Jan 2003

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title = "AlN/diamond heterojunction diodes",

abstract = "Epitaxial wurzite (0001) AlN:Si (n-type) was grown on (100) naturally boron-doped diamond (p-type) substrates. The fabricated p-n heterojunction diodes showed clear diode characteristics with rectifying ratios between 103 and 104 at low voltages. The results confirmed the viability of heteroepitaxial growth of III-nitrides on diamond.",

author = "Miskys, {C. R.} and Garrido, {J. A.} and Nebel, {C. E.} and M. Hermann and O. Ambacher and M. Eickhoff and M. Stutzmann",

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AU - Miskys, C. R.

AU - Garrido, J. A.

AU - Nebel, C. E.

AU - Hermann, M.

AU - Ambacher, O.

AU - Eickhoff, M.

AU - Stutzmann, M.

PY - 2003/1/13

Y1 - 2003/1/13

N2 - Epitaxial wurzite (0001) AlN:Si (n-type) was grown on (100) naturally boron-doped diamond (p-type) substrates. The fabricated p-n heterojunction diodes showed clear diode characteristics with rectifying ratios between 103 and 104 at low voltages. The results confirmed the viability of heteroepitaxial growth of III-nitrides on diamond.

AB - Epitaxial wurzite (0001) AlN:Si (n-type) was grown on (100) naturally boron-doped diamond (p-type) substrates. The fabricated p-n heterojunction diodes showed clear diode characteristics with rectifying ratios between 103 and 104 at low voltages. The results confirmed the viability of heteroepitaxial growth of III-nitrides on diamond.

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DO - 10.1063/1.1532545

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SN - 0003-6951

VL - 82

SP - 290

EP - 292

JO - Applied Physics Letters

JF - Applied Physics Letters

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AlN/diamond heterojunction diodes

Abstract

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