Al(In)As-(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers

Keyphrases

• Active Regions 100%
• Quantum Cascade Laser 100%
• Strain-compensated 100%
• Threshold Current Density 100%
• Injectorless 100%
• Injector 50%
• Power Output 50%
• High Reflection 50%
• Blocking Layer 50%
• Maximum Operation Temperature 50%
• Device Property 50%
• Material System 50%
• Characteristic Temperature 50%
• Carrier Lifetime 50%
• Effective Mass 50%
• Population Inversion 50%
• Tmax 50%
• Pulse Mode 50%
• AlInAs 50%
• InP-based 50%
• Improved Structure 50%
• Quasicontinuum 50%
• Active Stage 50%
• Dipole Matrix Elements 50%
• Insertion Layer 50%
• Slope Efficiency 50%
• GaInAs 50%
• Slope Characteristic 50%

Engineering

• Active Region 100%
• Threshold Current Density 100%
• Output Power 50%
• Matrix Element 50%
• Material System 50%
• Maximum Operating Temperature 50%
• Carrier Lifetime 50%
• Population Inversion 50%
• Flat Surface 50%