Abstract
AlGaN-based photoconductors with high photoresponse in a narrow spectral range can be realized by a combination of three epitaxial AlGaN layers with different alloy composition are demonstrated. The films are grown on top of each other by molecular beam epitaxy (MBE) and act as optical filter, isolator, and detector layers, respectively. Experimental results on structural properties, spectral response, intensity, and voltage dependent responsiveness at distinct wavelength as well as the photocurrent decay are presented.
Original language | English |
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Pages (from-to) | 757-760 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 18 |
Issue number | 2 |
DOIs | |
State | Published - Mar 2000 |