AlGaN-based Bragg reflectors

O. Ambacher; M. Arzberger; D. Brunner; H. Angerer; F. Freudenberg; N. Esser; T. Wethkamp; K. Wilmers; W. Richter; M. Stutzmann

doi:10.1557/s1092578300001484

AlGaN-based Bragg reflectors

O. Ambacher
, M. Arzberger
, D. Brunner
, H. Angerer
, F. Freudenberg
, N. Esser
, T. Wethkamp
, K. Wilmers
, W. Richter
, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut
Technische Universität Berlin

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have studied the dependence of the absorption edge and the refractive index of wurtzite Al_xGa_1-xN films on composition using transmission, ellipsometry and photothermal deflection spectroscopy. The Al molar fraction of the Al_xGa_1-xN films grown by plasma-induced molecular beam epitaxy was varied through the entire range of composition (0 ≤ x ≤ 1). We determined the absorption edges of Al _xGa_1-xN films and a bowing parameter of 1.3 ± 0.2 eV. The refractive index below the bandgap was deduced from the interference fringes, the dielectric function between 2.5 and 25 eV from ellipsometry measurements. The measured absorption coefficients and refractive indices were used to calculate the design and reflectivity of AlGaN-based Bragg reflectors working in the blue and near-ultraviolet spectral region.

Original language	English
Pages (from-to)	12d
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	2
DOIs	https://doi.org/10.1557/s1092578300001484
State	Published - 1997

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title = "AlGaN-based Bragg reflectors",

abstract = "We have studied the dependence of the absorption edge and the refractive index of wurtzite AlxGa1-xN films on composition using transmission, ellipsometry and photothermal deflection spectroscopy. The Al molar fraction of the AlxGa1-xN films grown by plasma-induced molecular beam epitaxy was varied through the entire range of composition (0 ≤ x ≤ 1). We determined the absorption edges of Al xGa1-xN films and a bowing parameter of 1.3 ± 0.2 eV. The refractive index below the bandgap was deduced from the interference fringes, the dielectric function between 2.5 and 25 eV from ellipsometry measurements. The measured absorption coefficients and refractive indices were used to calculate the design and reflectivity of AlGaN-based Bragg reflectors working in the blue and near-ultraviolet spectral region.",

author = "O. Ambacher and M. Arzberger and D. Brunner and H. Angerer and F. Freudenberg and N. Esser and T. Wethkamp and K. Wilmers and W. Richter and M. Stutzmann",

year = "1997",

doi = "10.1557/s1092578300001484",

language = "English",

volume = "2",

pages = "12d",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

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TY - JOUR

T1 - AlGaN-based Bragg reflectors

AU - Ambacher, O.

AU - Arzberger, M.

AU - Brunner, D.

AU - Angerer, H.

AU - Freudenberg, F.

AU - Esser, N.

AU - Wethkamp, T.

AU - Wilmers, K.

AU - Richter, W.

AU - Stutzmann, M.

PY - 1997

Y1 - 1997

N2 - We have studied the dependence of the absorption edge and the refractive index of wurtzite AlxGa1-xN films on composition using transmission, ellipsometry and photothermal deflection spectroscopy. The Al molar fraction of the AlxGa1-xN films grown by plasma-induced molecular beam epitaxy was varied through the entire range of composition (0 ≤ x ≤ 1). We determined the absorption edges of Al xGa1-xN films and a bowing parameter of 1.3 ± 0.2 eV. The refractive index below the bandgap was deduced from the interference fringes, the dielectric function between 2.5 and 25 eV from ellipsometry measurements. The measured absorption coefficients and refractive indices were used to calculate the design and reflectivity of AlGaN-based Bragg reflectors working in the blue and near-ultraviolet spectral region.

AB - We have studied the dependence of the absorption edge and the refractive index of wurtzite AlxGa1-xN films on composition using transmission, ellipsometry and photothermal deflection spectroscopy. The Al molar fraction of the AlxGa1-xN films grown by plasma-induced molecular beam epitaxy was varied through the entire range of composition (0 ≤ x ≤ 1). We determined the absorption edges of Al xGa1-xN films and a bowing parameter of 1.3 ± 0.2 eV. The refractive index below the bandgap was deduced from the interference fringes, the dielectric function between 2.5 and 25 eV from ellipsometry measurements. The measured absorption coefficients and refractive indices were used to calculate the design and reflectivity of AlGaN-based Bragg reflectors working in the blue and near-ultraviolet spectral region.

UR - https://www.scopus.com/pages/publications/0343993912

U2 - 10.1557/s1092578300001484

DO - 10.1557/s1092578300001484

M3 - Article

AN - SCOPUS:0343993912

SN - 1092-5783

VL - 2

SP - 12d

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

ER -

AlGaN-based Bragg reflectors

Abstract

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