AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers

Recently, we demonstrated InP-based VCSELs at 1.5 μm with record device performance, achieving low threshold currents (< 1 mA), threshold voltages (∼1 V) and high output powers (> 1 mW) at room temperature and under continuous wave conditions (Ortsiefer et al., Appl. Phys. Lett. 76 (2000) 2179). In this presentation, we describe the epitaxial growth methods applied for the realization of these high-performance devices. For growing suitable device structures, a very good reproducibility of device parameters, such as the center wavelength of the distributed Bragg reflector, the emission wavelength of the active region and the lasing mode, as well as the possibility to fabricate new tailored devices without great effort are required. An in-situ control technique using the standard pyrometer is a simple and efficient method to monitor growth rates and to enable an in-situ adjustment of growth parameters for the control of lattice matching and layer thicknesses. Using this technique, VCSELs in the 1.5-1.8 μm wavelength range with excellent performance have been fabricated.